Multilevel resistive switching memory with amorphous InGaZnO-based thin film

Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance

(2011) Z. Q. Wang et al.   IEEE ELECTRON DEVICE LETTERS

Bistable resistance memory switching effect in amorphous InGaZnO thin films

(2010) C. H. Kim et al.   APPLIED PHYSICS LETTERS

Fast-Write Resistive RAM (RRAM) for Embedded Applications

(2010) Shyh-Shyuan Sheu et al.   IEEE DESIGN & TEST OF COMPUTERS

Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

(2010) W.C. Chien et al.   IEEE ELECTRON DEVICE LETTERS

Development of Liquid Crystal Display Panel Integrated with Drivers Using Amorphous In–Ga–Zn-Oxide Thin Film Transistors

(2010) Takeshi Osada et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Multilevel resistive switching in Ti/CuxO/Pt memory devices

(2010) Sheng-Yu Wang et al.   JOURNAL OF APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Local structure and conduction mechanism in amorphous In–Ga–Zn–O films

(2009) Deok-Yong Cho et al.   APPLIED PHYSICS LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today