Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

Title
Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 12, Pages 124505
Publisher
AIP Publishing
Online
2013-09-26
DOI
10.1063/1.4822158

Ask authors/readers for more resources

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started