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Title
Quantum Conductance in Silicon Oxide Resistive Memory Devices
Authors
Keywords
-
Journal
Scientific Reports
Volume 3, Issue 1, Pages -
Publisher
Springer Nature
Online
2013-09-19
DOI
10.1038/srep02708
References
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Related references
Note: Only part of the references are listed.- Quantum-size effects in hafnium-oxide resistive switching
- (2013) Shibing Long et al. APPLIED PHYSICS LETTERS
- Resistive switching mechanism in silicon highly rich SiOx (x
- (2013) Yuefei Wang et al. APPLIED PHYSICS LETTERS
- Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory
- (2012) Xiaojian Zhu et al. ADVANCED MATERIALS
- Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices
- (2012) E. Miranda et al. APPLIED PHYSICS LETTERS
- Quantized Conductance in $\hbox{Ag/GeS}_{2}/\hbox{W}$ Conductive-Bridge Memory Cells
- (2012) John R. Jameson et al. IEEE ELECTRON DEVICE LETTERS
- Observing “quantized” conductance steps in silver sulfide: Two parallel resistive switching mechanisms
- (2012) Jelmer J. T. Wagenaar et al. JOURNAL OF APPLIED PHYSICS
- Resistive switching in silicon suboxide films
- (2012) Adnan Mehonic et al. JOURNAL OF APPLIED PHYSICS
- Quantum conductance and switching kinetics of AgI-based microcrossbar cells
- (2012) S Tappertzhofen et al. NANOTECHNOLOGY
- Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch
- (2012) Tohru Tsuruoka et al. NANOTECHNOLOGY
- Electrically tailored resistance switching in silicon oxide
- (2012) Adnan Mehonic et al. NANOTECHNOLOGY
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- In situ imaging of the conducting filament in a silicon oxide resistive switch
- (2012) Jun Yao et al. Scientific Reports
- Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM
- (2011) Daniele Ielmini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
- (2011) Kyung Min Kim et al. NANOTECHNOLOGY
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
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