Controllable Set Voltage in Bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation

Published 2014 View Full Article

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Journal

IEEE ELECTRON DEVICE LETTERS

Volume 35, Issue 12, Pages 1227-1229

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2014-10-21

DOI

10.1109/led.2014.2360525

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