High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 1, Pages 012101
Publisher
AIP Publishing
Online
2013-07-03
DOI
10.1063/1.4813090
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors
- (2012) Sheng-Yao Huang et al. APPLIED PHYSICS LETTERS
- Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors
- (2012) Tien-Yu Hsieh et al. IEEE ELECTRON DEVICE LETTERS
- Investigating Degradation Behaviors Induced by DC and AC Bias-Stress under Light Illumination in InGaZnO Thin-Film Transistors
- (2012) Tien-Yu Hsieh et al. ECS Journal of Solid State Science and Technology
- Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors
- (2011) Wan-Fang Chung et al. APPLIED PHYSICS LETTERS
- Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
- (2011) Yong-En Syu et al. IEEE ELECTRON DEVICE LETTERS
- Developments in nanocrystal memory
- (2011) Ting-Chang Chang et al. Materials Today
- Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
- (2010) Yu-Chun Chen et al. APPLIED PHYSICS LETTERS
- Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
- (2010) Te-Chih Chen et al. APPLIED PHYSICS LETTERS
- Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor
- (2010) Chih-Tsung Tsai et al. APPLIED PHYSICS LETTERS
- Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
- (2010) Min-Chen Chen et al. APPLIED PHYSICS LETTERS
- Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices
- (2010) Yu-Ting Tsai et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors
- (2010) S.W. Tsao et al. SOLID-STATE ELECTRONICS
- Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors
- (2009) Sunho Jeong et al. ADVANCED MATERIALS
- A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid
- (2009) Min-Chen Chen et al. APPLIED PHYSICS LETTERS
- Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application
- (2008) Wei-Ren Chen et al. APPLIED PHYSICS LETTERS
- Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
- (2008) Jeong-Min Lee et al. APPLIED PHYSICS LETTERS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search