Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
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Title
Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 13, Pages 133503
Publisher
AIP Publishing
Online
2013-04-04
DOI
10.1063/1.4799655
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