Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator

(2009) Yeon-Keon Moon et al.   APPLIED PHYSICS LETTERS

MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source–Drain Bulk Region

(2009) Jaewook Jeong et al.   Journal of Display Technology

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

(2008) Jaechul Park et al.   APPLIED PHYSICS LETTERS

Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

(2008) Jin-Seong Park et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

Effect of N[sub 2]O Plasma Treatment on the Performance of ZnO TFTs

(2008) K. Remashan et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Threshold Voltage Control of Amorphous Gallium Indium Zinc Oxide TFTs by Suppressing Back-Channel Current

(2008) Kyoung-Seok Son et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Stress-Induced Hump Effects of p-Channel Polycrystalline Silicon Thin-Film Transistors

(2008) Ching-Fang Huang et al.   IEEE ELECTRON DEVICE LETTERS

Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

(2008) Jang Yeon Kwon et al.   IEEE ELECTRON DEVICE LETTERS