Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

(2014) Tian-Jian Chu et al.   IEEE ELECTRON DEVICE LETTERS

Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

(2014) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

(2014)   IEEE ELECTRON DEVICE LETTERS

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

(2014)   IEEE ELECTRON DEVICE LETTERS

Performance and characteristics of double layer porous silicon oxide resistance random access memory

(2013) Tsung-Ming Tsai et al.   APPLIED PHYSICS LETTERS

Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process

(2013) Kuan-Chang Chang et al.   APPLIED PHYSICS LETTERS

Characteristics of hafnium oxide resistance random access memory with different setting compliance current

(2013) Yu-Ting Su et al.   APPLIED PHYSICS LETTERS

Atomic-level quantized reaction of HfOx memristor

(2013) Yong-En Syu et al.   APPLIED PHYSICS LETTERS

Pi-gate tunneling field-effect transistor charge trapping nonvolatile memory based on all tunneling transportation

(2013) Yi-Ruei Jhan et al.   APPLIED PHYSICS LETTERS

Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device

(2013) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

(2013) Tian-Jian Chu et al.   IEEE ELECTRON DEVICE LETTERS

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2structure resistance random access memory

(2013) Rui Zhang et al.   JOURNAL OF APPLIED PHYSICS

Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

(2013) Kuan-Chang Chang et al.   JOURNAL OF SUPERCRITICAL FLUIDS

Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

(2013) Kuan-Chang Chang et al.   Nanoscale Research Letters

Self-heating enhanced charge trapping effect for InGaZnO thin film transistor

(2012) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

(2012) Tsung-Ming Tsai et al.   APPLIED PHYSICS LETTERS

Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

(2012) Li-Feng Teng et al.   APPLIED PHYSICS LETTERS

Silicon introduced effect on resistive switching characteristics of WOX thin films

(2012) Yong-En Syu et al.   APPLIED PHYSICS LETTERS

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

(2012) Tsung-Ming Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation

(2012) Wen-hung Lo et al.   IEEE ELECTRON DEVICE LETTERS

Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment

(2012) Tsung-Ming Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Twin Thin-Film Transistor Nonvolatile Memory With an Indium–Gallium–Zinc–Oxide Floating Gate

(2012) Min-Feng Hung et al.   IEEE ELECTRON DEVICE LETTERS

Self-Heating-Effect-Induced Degradation Behaviors in a-InGaZnO Thin-Film Transistors

(2012) Tien-Yu Hsieh et al.   IEEE ELECTRON DEVICE LETTERS

Systematic Investigations on Self-Heating-Effect-Induced Degradation Behavior in a-InGaZnO Thin-Film Transistors

(2012) Tien-Yu Hsieh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Drastic improvement of oxide thermoelectric performance using thermal and plasma treatments of the InGaZnO thin films grown by sputtering

(2011) Dong Kyu Seo et al.   ACTA MATERIALIA

Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

(2011) Kuan-Chang Chang et al.   APPLIED PHYSICS LETTERS

High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory

(2011) Min-Feng Hung et al.   APPLIED PHYSICS LETTERS

Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

(2011) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment

(2011) Kuan-Chang Chang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

The Effect of Silicon Oxide Based RRAM with Tin Doping

(2011) Kuan-Chang Chang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

(2011) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Developments in nanocrystal memory

(2011) Ting-Chang Chang et al.   Materials Today

Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT

(2011) Chur-Shyang Fuh et al.   THIN SOLID FILMS

Atomic-level control of the thermoelectric properties in polytypoid nanowires

(2011) Sean C. Andrews et al.   Chemical Science

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

(2010) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

(2010) Chih-Tsung Tsai et al.   APPLIED PHYSICS LETTERS

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(2010) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

Influence of H[sub 2]O Dipole on Subthreshold Swing of Amorphous Indium–Gallium–Zinc-Oxide Thin Film Transistors

(2010) Wan-Fang Chung et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium–Gallium–Zinc–Oxide Charge-Trapping Layer

(2010) Lun-Chun Chen et al.   IEEE ELECTRON DEVICE LETTERS

On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs

(2010) Chih-Hao Dai et al.   IEEE ELECTRON DEVICE LETTERS

Gate-bias stress in amorphous oxide semiconductors thin-film transistors

(2009) M. E. Lopes et al.   APPLIED PHYSICS LETTERS

Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress

(2009) Po-Tsun Liu et al.   APPLIED PHYSICS LETTERS

Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

(2008) Jin-Seong Park et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

(2008) Jeong-Min Lee et al.   APPLIED PHYSICS LETTERS

Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted

(2008) Qi Liu et al.   APPLIED PHYSICS LETTERS

Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors

(2008) Mami Fujii et al.   JAPANESE JOURNAL OF APPLIED PHYSICS