Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress

Title
Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 18, Pages 182103
Publisher
AIP Publishing
Online
2012-05-02
DOI
10.1063/1.4709417

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