标题
A comprehensive review on emerging artificial neuromorphic devices
作者
关键词
-
出版物
Applied Physics Reviews
Volume 7, Issue 1, Pages 011312
出版商
AIP Publishing
发表日期
2020-02-24
DOI
10.1063/1.5118217
参考文献
相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。- Polymer Analog Memristive Synapse with Atomic-Scale Conductive Filament for Flexible Neuromorphic Computing System
- (2019) Byung Chul Jang et al. NANO LETTERS
- Unveiling the double-well energy landscape in a ferroelectric layer
- (2019) Michael Hoffmann et al. NATURE
- Integrated microwave photonics
- (2019) David Marpaung et al. Nature Photonics
- Near-Infrared Annihilation of Conductive Filaments in Quasiplane MoSe2 /Bi2 Se3 Nanosheets for Mimicking Heterosynaptic Plasticity
- (2019) Yan Wang et al. Small
- Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
- (2019) Wei Wang et al. Nature Communications
- Low-Loss and Broadband Nonvolatile Phase-Change Directional Coupler Switches
- (2019) Peipeng Xu et al. ACS Photonics
- Designing crystallization in phase-change materials for universal memory and neuro-inspired computing
- (2019) Wei Zhang et al. Nature Reviews Materials
- Photonic In-Memory Computing Primitive for Spiking Neural Networks Using Phase-Change Materials
- (2019) Indranil Chakraborty et al. Physical Review Applied
- Light‐Stimulated Synaptic Transistors Fabricated by a Facile Solution Process Based on Inorganic Perovskite Quantum Dots and Organic Semiconductors
- (2019) Kai Wang et al. Small
- Vertical, electrolyte-gated organic transistors show continuous operation in the MA cm−2 regime and artificial synaptic behaviour
- (2019) Jakob Lenz et al. Nature Nanotechnology
- Ferroelectric Analog Synaptic Transistors
- (2019) Min-Kyu Kim et al. NANO LETTERS
- Characterization of VO2/ferroelectric thin film heterostructures deposited on various complex oxide single crystal substrates
- (2019) Adrian Petraru et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Influence of Frenkel defects on endurance behavior in SnO2:Cu memristors
- (2019) Fang Mei et al. JOURNAL OF APPLIED PHYSICS
- Organic thin film memcapacitors
- (2019) Jia-Wei Cai et al. APPLIED PHYSICS LETTERS
- Chalcogenide Phase Change Material for Active Terahertz Photonics
- (2019) Prakash Pitchappa et al. ADVANCED MATERIALS
- Piezotronic Graphene Artificial Sensory Synapse
- (2019) Youhui Chen et al. ADVANCED FUNCTIONAL MATERIALS
- Spatiotemporal Information Processing Emulated by Multiterminal Neuro‐Transistor Networks
- (2019) Yongli He et al. ADVANCED MATERIALS
- Over 100% magnetoresistance ratio at room temperature in magnetic tunnel junctions with CuGaSe2 spacer layer
- (2019) K. Mukaiyama et al. APPLIED PHYSICS LETTERS
- Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing
- (2019) Elliot J. Fuller et al. SCIENCE
- Artificial Sensory Memory
- (2019) Changjin Wan et al. ADVANCED MATERIALS
- Physically Transient True Random Number Generators Based on Paired Threshold Switches Enabling Monte Carlo Method Applications
- (2019) Bingjie Dang et al. IEEE ELECTRON DEVICE LETTERS
- Optoelectronic resistive random access memory for neuromorphic vision sensors
- (2019) Feichi Zhou et al. Nature Nanotechnology
- Moisture effect on the diffusion of Cu ions in Cu/Ta2O5/Pt and Cu/SiO2/Pt resistance switches: a first-principles study
- (2019) Bo Xiao et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing
- (2019) Bingjie Dang et al. APL Materials
- Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier
- (2019) Zheng Wen et al. ADVANCED MATERIALS
- Improvement of Conductance Modulation Linearity in a Cu2+-Doped KNbO3 Memristor through the Increase of the Number of Oxygen Vacancies
- (2019) Sung-Mean Park et al. ACS Applied Materials & Interfaces
- Chitosan-Based Polysaccharide-Gated Flexible Indium Tin Oxide Synaptic Transistor with Learning Abilities
- (2018) Fei Yu et al. ACS Applied Materials & Interfaces
- Light-Stimulated Synaptic Devices Utilizing Interfacial Effect of Organic Field-Effect Transistors
- (2018) Shilei Dai et al. ACS Applied Materials & Interfaces
- Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
- (2018) Halid Mulaosmanovic et al. ACS Applied Materials & Interfaces
- Synaptic Plasticity and Metaplasticity of Biological Synapse Realized in a KNbO3 Memristor for Application to Artificial Synapse
- (2018) Tae-Ho Lee et al. ACS Applied Materials & Interfaces
- Aligned Carbon Nanotube Synaptic Transistors for Large-Scale Neuromorphic Computing
- (2018) Ivan Sanchez Esqueda et al. ACS Nano
- Atomic Scale Photodetection Enabled by a Memristive Junction
- (2018) Alexandros Emboras et al. ACS Nano
- In Situ Observation of Resistive Switching in an Asymmetric Graphene Oxide Bilayer Structure
- (2018) Sungkyu Kim et al. ACS Nano
- Submillimeter 2D Bi2 Se3 Flakes toward High-Performance Infrared Photodetection at Optical Communication Wavelength
- (2018) Fakun Wang et al. ADVANCED FUNCTIONAL MATERIALS
- CdS Nanoribbon-Based Resistive Switches with Ultrawidely Tunable Power by Surface Charge Transfer Doping
- (2018) Zhibin Shao et al. ADVANCED FUNCTIONAL MATERIALS
- UV-Induced Multilevel Current Amplification Memory Effect in Zinc Oxide Rods Resistive Switching Devices
- (2018) Paola Russo et al. ADVANCED FUNCTIONAL MATERIALS
- Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity
- (2018) Jun Yin et al. ADVANCED FUNCTIONAL MATERIALS
- Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory
- (2018) Sung Pyo Park et al. ADVANCED MATERIALS
- Nonvolatile Memory Materials for Neuromorphic Intelligent Machines
- (2018) Doo Seok Jeong et al. ADVANCED MATERIALS
- Organic-Inorganic Hybrid Halide Perovskites for Memories, Transistors, and Artificial Synapses
- (2018) Jaeho Choi et al. ADVANCED MATERIALS
- An Artificial Flexible Visual Memory System Based on an UV-Motivated Memristor
- (2018) Shuai Chen et al. ADVANCED MATERIALS
- Mimicking Synaptic Plasticity and Neural Network Using Memtranstors
- (2018) Jian-Xin Shen et al. ADVANCED MATERIALS
- An Artificial Sensory Neuron with Tactile Perceptual Learning
- (2018) Changjin Wan et al. ADVANCED MATERIALS
- Synergistic Gating of Electro-Iono-Photoactive 2D Chalcogenide Neuristors: Coexistence of Hebbian and Homeostatic Synaptic Metaplasticity
- (2018) Rohit Abraham John et al. ADVANCED MATERIALS
- Synaptic Barristor Based on Phase-Engineered 2D Heterostructures
- (2018) Woong Huh et al. ADVANCED MATERIALS
- Excitation and Amplification of Spin Waves by Spin-Orbit Torque
- (2018) Boris Divinskiy et al. ADVANCED MATERIALS
- Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics
- (2018) Jiadi Zhu et al. ADVANCED MATERIALS
- Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects
- (2018) Xiaolong Zhao et al. ADVANCED MATERIALS
- Artificial Synapses Emulated by an Electrolyte-Gated Tungsten-Oxide Transistor
- (2018) Jing-Ting Yang et al. ADVANCED MATERIALS
- Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules
- (2018) Thomas Heisig et al. ADVANCED MATERIALS
- Self-Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer
- (2018) Yujun Xie et al. ADVANCED MATERIALS
- Transient dynamics of NbOx threshold switches explained by Poole-Frenkel based thermal feedback mechanism
- (2018) Ziwen Wang et al. APPLIED PHYSICS LETTERS
- Electric field-induced resistive switching, magnetism, and photoresponse modulation in a Pt/Co0.03Zn0.97O/Nb:SrTiO3 multi-function heterostructure
- (2018) Zhipeng Luo et al. APPLIED PHYSICS LETTERS
- Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change
- (2018) Y. Shuang et al. APPLIED PHYSICS LETTERS
- Argon-plasma-controlled optical reset in the SiO2/Cu filamentary resistive memory stack
- (2018) T. Kawashima et al. APPLIED PHYSICS LETTERS
- A non-collinear double MgO based perpendicular magnetic tunnel junction
- (2018) James Lourembam et al. APPLIED PHYSICS LETTERS
- Controllable SET process in O-Ti-Sb-Te based phase change memory for synaptic application
- (2018) Kun Ren et al. APPLIED PHYSICS LETTERS
- Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices
- (2018) Quantan Wu et al. APPLIED PHYSICS LETTERS
- Memristive switching behaviour in In2Te5 asymmetrical hetero-structures
- (2018) Yafei Yuan et al. ELECTRONICS LETTERS
- Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems
- (2018) Seokjae Lim et al. IEEE ELECTRON DEVICE LETTERS
- An Artificial Neuron Based on a Threshold Switching Memristor
- (2018) Xumeng Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Light Stimulated IGZO-Based Electric-Double-Layer Transistors For Photoelectric Neuromorphic Devices
- (2018) Yi Yang et al. IEEE ELECTRON DEVICE LETTERS
- Transient Joule Heating based Oscillator Neuron for Neuromorphic Computing
- (2018) S. Lashkare et al. IEEE ELECTRON DEVICE LETTERS
- First Demonstration of a Logic-process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications
- (2018) Myungsoo Seo et al. IEEE ELECTRON DEVICE LETTERS
- Leaky Integrate-and-Fire Biristor Neuron
- (2018) Jin-Woo Han et al. IEEE ELECTRON DEVICE LETTERS
- Neuromorphic Photonic Integrated Circuits
- (2018) Hsuan-Tung Peng et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance
- (2018) Kai Ni et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study
- (2018) Nian-Ke Chen et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Integration of external electric fields in molecular dynamics simulation models for resistive switching devices
- (2018) T. Gergs et al. JOURNAL OF APPLIED PHYSICS
- Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction
- (2018) Zhipeng Dong et al. JOURNAL OF APPLIED PHYSICS
- Coexistence of unipolar and bipolar resistive switching behaviors in NiFe2O4 thin film devices by doping Ag nanoparticles
- (2018) Aize Hao et al. JOURNAL OF APPLIED PHYSICS
- A SnS2-based photomemristor driven by sun
- (2018) Mircea Dragoman et al. JOURNAL OF APPLIED PHYSICS
- Direct Mapping of Phase Separation across the Metal–Insulator Transition of NdNiO3
- (2018) Daniele Preziosi et al. NANO LETTERS
- K-means Data Clustering with Memristor Networks
- (2018) YeonJoo Jeong et al. NANO LETTERS
- Electronic Origin of Optically-Induced Sub-Picosecond Lattice Dynamics in MoSe2 Monolayer
- (2018) Lindsay Bassman et al. NANO LETTERS
- Van der Waals interfacial bonding and intermixing in GeTe-Sb2Te3-based superlattices
- (2018) Andriy Lotnyk et al. Nano Research
- Full imitation of synaptic metaplasticity based on memristor devices
- (2018) Quantan Wu et al. Nanoscale
- A self-resetting spiking phase-change neuron
- (2018) R A Cobley et al. NANOTECHNOLOGY
- Realization of synaptic learning and memory functions in Y2O3 based memristive device fabricated by dual ion beam sputtering
- (2018) Mangal Das et al. NANOTECHNOLOGY
- High speed chalcogenide glass electrochemical metallization cells with various active metals
- (2018) Mark A Hughes et al. NANOTECHNOLOGY
- The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2
- (2018) Youngin Goh et al. NANOTECHNOLOGY
- Equivalent-accuracy accelerated neural-network training using analogue memory
- (2018) Stefano Ambrogio et al. NATURE
- Pyroelectric energy conversion with large energy and power density in relaxor ferroelectric thin films
- (2018) Shishir Pandya et al. NATURE MATERIALS
- Monatomic phase change memory
- (2018) Martin Salinga et al. NATURE MATERIALS
- Spin transport and spin torque in antiferromagnetic devices
- (2018) J. Železný et al. Nature Physics
- A bioinspired flexible organic artificial afferent nerve
- (2018) Yeongin Kim et al. SCIENCE
- Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices
- (2018) Philippe Kowalczyk et al. Small
- Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application
- (2018) Jing Sun et al. Small
- Biological Spiking Synapse Constructed from Solution Processed Bimetal Core-Shell Nanoparticle Based Composites
- (2018) Li Zhou et al. Small
- Photonic Potentiation and Electric Habituation in Ultrathin Memristive Synapses Based on Monolayer MoS2
- (2018) Hui-Kai He et al. Small
- Single Nanoparticle Magnetic Spin Memristor
- (2018) Hammam Al-Bustami et al. Small
- Neural-like computing with populations of superparamagnetic basis functions
- (2018) Alice Mizrahi et al. Nature Communications
- An artificial nociceptor based on a diffusive memristor
- (2018) Jung Ho Yoon et al. Nature Communications
- Separation of current density and electric field domains caused by nonlinear electronic instabilities
- (2018) Suhas Kumar et al. Nature Communications
- Signal and noise extraction from analog memory elements for neuromorphic computing
- (2018) N. Gong et al. Nature Communications
- Efficient and self-adaptive in-situ learning in multilayer memristor neural networks
- (2018) Can Li et al. Nature Communications
- Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
- (2018) Mengxing Wang et al. Nature Communications
- Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions
- (2018) K. Watanabe et al. Nature Communications
- Electric-double-layer transistors for synaptic devices and neuromorphic systems
- (2018) Yongli He et al. Journal of Materials Chemistry C
- Stochastic IMT (Insulator-Metal-Transition) Neurons: An Interplay of Thermal and Threshold Noise at Bifurcation
- (2018) Abhinav Parihar et al. Frontiers in Neuroscience
- Reorientable Spin Direction for Spin Current Produced by the Anomalous Hall Effect
- (2018) Jonathan D. Gibbons et al. Physical Review Applied
- Magnetic Skyrmion as a Nonlinear Resistive Element: A Potential Building Block for Reservoir Computing
- (2018) Diana Prychynenko et al. Physical Review Applied
- A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO3 -Based Memory Cell
- (2018) Carsten Funck et al. Advanced Electronic Materials
- Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2 /Al2 O3 /TiO x (HAT) RRAM
- (2018) Writam Banerjee et al. Advanced Electronic Materials
- Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiO x Modulated by Moisture
- (2018) Guangdong Zhou et al. Advanced Electronic Materials
- Narrow Heater Bottom Electrode-Based Phase Change Memory as a Bidirectional Artificial Synapse
- (2018) Selina La Barbera et al. Advanced Electronic Materials
- Silicon-Based Hybrid Optoelectronic Devices with Synaptic Plasticity and Stateful Photoresponse
- (2018) Yan Chen et al. Advanced Electronic Materials
- Reliable Ge2 Sb2 Te5 -Integrated High-Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen-Doping Strategy
- (2018) Niloufar Raeis-Hosseini et al. Advanced Electronic Materials
- Organic electrochemical transistors
- (2018) Jonathan Rivnay et al. Nature Reviews Materials
- Ultralow power artificial synapses using nanotextured magnetic Josephson junctions
- (2018) Michael L. Schneider et al. Science Advances
- All-Oxide-Based Highly Transparent Photonic Synapse for Neuromorphic Computing
- (2018) Mohit Kumar et al. ACS Applied Materials & Interfaces
- One-Pot Preparation of Mechanically Robust, Transparent, Highly Conductive, and Memristive Metal–Organic Ultrathin Film
- (2018) Miriam Moreno-Moreno et al. ACS Nano
- MoS2 Memristors Exhibiting Variable Switching Characteristics toward Biorealistic Synaptic Emulation
- (2018) Da Li et al. ACS Nano
- All-Solid-State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing
- (2018) Chuan-Sen Yang et al. ADVANCED FUNCTIONAL MATERIALS
- Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning
- (2018) Xiaobing Yan et al. ADVANCED FUNCTIONAL MATERIALS
- Low-Power, Electrochemically Tunable Graphene Synapses for Neuromorphic Computing
- (2018) Mohammad Taghi Sharbati et al. ADVANCED MATERIALS
- Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing
- (2018) Yan Wang et al. ADVANCED MATERIALS
- Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory
- (2018) Yi-Ting Tseng et al. APPLIED PHYSICS LETTERS
- Self-assembled 2D finned covellite (CuS) for resistive RAM
- (2018) Zhen Quan Cavin Ng et al. APPLIED PHYSICS LETTERS
- A resistive switching memory device with a negative differential resistance at room temperature
- (2018) Mayameen S. Kadhim et al. APPLIED PHYSICS LETTERS
- Configurable ultra-low operating voltage resistive switching between bipolar and threshold behaviors for Ag/TaOx/Pt structures
- (2018) Xu Huang et al. APPLIED PHYSICS LETTERS
- Diameter dependent threshold voltage modification of resistive state switching in organometallic single nanowire devices (diameter ∼ 10–100 nm)
- (2018) Rabaya Basori et al. APPLIED PHYSICS LETTERS
- The ultimate switching speed limit of redox-based restive switching devices
- (2018) Stephan Menzel et al. FARADAY DISCUSSIONS
- Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices
- (2018) Elia Ambrosi et al. FARADAY DISCUSSIONS
- Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation
- (2018) Min-Woo Kwon et al. JOURNAL OF APPLIED PHYSICS
- Development of a molecular gap-type atomic switch and its stochastic operation
- (2018) Chisato Arima et al. JOURNAL OF APPLIED PHYSICS
- Mimicking synaptic functionality with an InAs nanowire phototransistor
- (2018) Bang Li et al. NANOTECHNOLOGY
- Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
- (2018) Vinod K. Sangwan et al. NATURE
- Capacitive neural network with neuro-transistors
- (2018) Zhongrui Wang et al. Nature Communications
- A wide-range operating synaptic device based on organic ferroelectricity with low energy consumption
- (2018) Li Tu et al. RSC Advances
- Handwritten-Digit Recognition by Hybrid Convolutional Neural Network based on HfO2 Memristive Spiking-Neuron
- (2018) J. J. Wang et al. Scientific Reports
- Toward Fast Neural Computing using All-Photonic Phase Change Spiking Neurons
- (2018) Indranil Chakraborty et al. Scientific Reports
- Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors
- (2018) Yawen Zhang et al. Scientific Reports
- When Memristance Crosses the Path with Humidity Sensing-About the Importance of Protons and Its Opportunities in Valence Change Memristors
- (2018) Felix Messerschmitt et al. Advanced Electronic Materials
- Optoelectronic Synapse Based on IGZO-Alkylated Graphene Oxide Hybrid Structure
- (2018) Jia Sun et al. ADVANCED FUNCTIONAL MATERIALS
- Photonic Organolead Halide Perovskite Artificial Synapse Capable of Accelerated Learning at Low Power Inspired by Dopamine-Facilitated Synaptic Activity
- (2018) Seonggil Ham et al. ADVANCED FUNCTIONAL MATERIALS
- Triboiontronic Transistor of MoS2
- (2018) Guoyun Gao et al. ADVANCED MATERIALS
- A MoS2 /PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility
- (2018) Shuiyuan Wang et al. ADVANCED MATERIALS
- Deep-ultraviolet-triggered neuromorphic functions in In-Zn-O phototransistors
- (2018) Juxiang Wang et al. APPLIED PHYSICS LETTERS
- Emulating dynamic synaptic plasticity over broad timescales with memristive device
- (2018) Yishu Zhang et al. APPLIED PHYSICS LETTERS
- Multilevel resistive and magnetization switching in Cu/CoFe2O4/Pt device: Coexistence of ionic and metallic conducting filaments
- (2018) Sandeep Munjal et al. APPLIED PHYSICS LETTERS
- Numerical Implementation of Wavelength-Dependent Photonic Spike Timing Dependent Plasticity Based on VCSOA
- (2018) Shuiying Xiang et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- Theoretical investigation of the Ag filament morphology in conductive bridge random access memories
- (2018) Kan-Hao Xue et al. JOURNAL OF APPLIED PHYSICS
- Perspective: Spintronic synapse for artificial neural network
- (2018) Shunsuke Fukami et al. JOURNAL OF APPLIED PHYSICS
- Mott insulators: A large class of materials for Leaky Integrate and Fire (LIF) artificial neuron
- (2018) Coline Adda et al. JOURNAL OF APPLIED PHYSICS
- Efficient learning and crossbar operations with atomically-thin 2-D material compound synapses
- (2018) Ivan Sanchez Esqueda et al. JOURNAL OF APPLIED PHYSICS
- Creation of Magnetic Skyrmion Bubble Lattices by Ultrafast Laser in Ultrathin Films
- (2018) Soong-Geun Je et al. NANO LETTERS
- Vowel recognition with four coupled spin-torque nano-oscillators
- (2018) Miguel Romera et al. NATURE
- Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing
- (2018) Xiaojian Zhu et al. NATURE MATERIALS
- Spin–orbit torque driven by a planar Hall current
- (2018) Christopher Safranski et al. Nature Nanotechnology
- Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension
- (2018) Shuang Pi et al. Nature Nanotechnology
- Simple One‐Step Fabrication of Semiconductive Lateral Heterostructures Using Bipolar Electrodeposition
- (2018) Loghman Jamilpanah et al. Physica Status Solidi-Rapid Research Letters
- Negative Capacitance Transistors
- (2018) Justin C. Wong et al. PROCEEDINGS OF THE IEEE
- Isostructural metal-insulator transition in VO2
- (2018) D. Lee et al. SCIENCE
- Highly Compact Artificial Memristive Neuron with Low Energy Consumption
- (2018) Yishu Zhang et al. Small
- Artificial optic-neural synapse for colored and color-mixed pattern recognition
- (2018) Seunghwan Seo et al. Nature Communications
- Biological plausibility and stochasticity in scalable VO2 active memristor neurons
- (2018) Wei Yi et al. Nature Communications
- Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities
- (2018) Gianluca Milano et al. Nature Communications
- Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays
- (2018) Yuhan Shi et al. Nature Communications
- Electroluminescent synaptic devices with logic functions
- (2018) Shuangyi Zhao et al. Nano Energy
- Flexible Artificial Synapses: Transferable and Flexible Artificial Memristive Synapse Based on WO x Schottky Junction on Arbitrary Substrates (Adv. Electron. Mater. 12/2018)
- (2018) Ya Lin et al. Advanced Electronic Materials
- Stretchable organic optoelectronic sensorimotor synapse
- (2018) Yeongjun Lee et al. Science Advances
- Saturation Behavior for a Comb-Like Light-Induced Synaptic Transistor
- (2017) Guixia Zhu et al. IEEE ELECTRON DEVICE LETTERS
- Design and Simulation of a Novel Graded-Channel Heterojunction Tunnel FET With High ${I} _{\scriptscriptstyle\text {ON}}/{I} _{\scriptscriptstyle\text {OFF}}$ Ratio and Steep Swing
- (2017) Jiadi Zhu et al. IEEE ELECTRON DEVICE LETTERS
- Arbitrary Spike Time Dependent Plasticity (STDP) in Memristor by Analog Waveform Engineering
- (2017) Neeraj Panwar et al. IEEE ELECTRON DEVICE LETTERS
- Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor
- (2017) Xumeng Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Synaptic Computation Demonstrated in a Two-Synapse Network Based on Top-Gate Electric-Double-Layer Synaptic Transistors
- (2017) Jiabin Wang et al. IEEE ELECTRON DEVICE LETTERS
- Long-Term Depression Mimicked in an IGZO-Based Synaptic Transistor
- (2017) Jiabin Wang et al. IEEE ELECTRON DEVICE LETTERS
- Top-Gate Electric-Double-Layer IZO-Based Synaptic Transistors for Neuron Networks
- (2017) Jiabin Wang et al. IEEE ELECTRON DEVICE LETTERS
- Unsupervised Learning Using Charge-Trap Transistors
- (2017) Xuefeng Gu et al. IEEE ELECTRON DEVICE LETTERS
- Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery
- (2017) Korok Chatterjee et al. IEEE ELECTRON DEVICE LETTERS
- Controlled Propagation of Spiking Dynamics in Vertical-Cavity Surface-Emitting Lasers: Towards Neuromorphic Photonic Networks
- (2017) Tao Deng et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Resistive RAM-Centric Computing: Design and Modeling Methodology
- (2017) Haitong Li et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- Proposal for a Leaky-Integrate-Fire Spiking Neuron Based on Magnetoelectric Switching of Ferromagnets
- (2017) Akhilesh Jaiswal et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe 2 O 4 -based devices
- (2017) Bai Sun et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Analysis of loss mechanisms in Ag2ZnSnSe4 Schottky barrier photovoltaics
- (2017) Talia Gershon et al. JOURNAL OF APPLIED PHYSICS
- Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La1/3Ca2/3MnO3/Pt structures using a compact memristive approach
- (2017) E. Miranda et al. JOURNAL OF APPLIED PHYSICS
- Mixed protonic and electronic conductors hybrid oxide synaptic transistors
- (2017) Yang Ming Fu et al. JOURNAL OF APPLIED PHYSICS
- Mechanism for bipolar resistive switching memory behaviors of a self-assembled three-dimensional MoS2 microsphere composed active layer
- (2017) G. D. Zhou et al. JOURNAL OF APPLIED PHYSICS
- Atomistic mechanisms of copper filament formation and composition in Al2O3-based conductive bridge random access memory
- (2017) C. Nail et al. JOURNAL OF APPLIED PHYSICS
- Integrated Circuit with Memristor Emulator Array and Neuron Circuits for Biologically Inspired Neuromorphic Pattern Recognition
- (2017) Rajeev Ranjan et al. JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS
- Integrate-and-Fire (I&F) Neuron Circuit Using Resistive-Switching Random Access Memory (RRAM)
- (2017) Min-Woo Kwon et al. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO 2 -based RRAM devices for artificial neuron and synapse elements
- (2017) Jiyong Woo et al. MICROELECTRONIC ENGINEERING
- Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2–BaTiO3–SrRuO3 Tunnel Junctions
- (2017) Tao Li et al. NANO LETTERS
- Synaptic Plasticity Selectively Activated by Polarization-Dependent Energy-Efficient Ion Migration in an Ultrathin Ferroelectric Tunnel Junction
- (2017) Chansoo Yoon et al. NANO LETTERS
- Experimental Demonstration of Feature Extraction and Dimensionality Reduction Using Memristor Networks
- (2017) Shinhyun Choi et al. NANO LETTERS
- Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors
- (2017) Suhas Kumar et al. Nanoscale
- Emulation of synaptic metaplasticity in memristors
- (2017) Xiaojian Zhu et al. Nanoscale
- Dynamic reconfiguration of van der Waals gaps within GeTe–Sb2Te3 based superlattices
- (2017) Jamo Momand et al. Nanoscale
- A novel artificial synapse with dual modes using bilayer graphene as the bottom electrode
- (2017) He Tian et al. Nanoscale
- In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface
- (2017) Kyungjoon Baek et al. Nanoscale
- Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices
- (2017) Writam Banerjee et al. Nanoscale
- Magnetic skyrmion-based artificial neuron device
- (2017) Sai Li et al. NANOTECHNOLOGY
- Magnetic skyrmion-based synaptic devices
- (2017) Yangqi Huang et al. NANOTECHNOLOGY
- SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems
- (2017) M Lübben et al. NANOTECHNOLOGY
- Neuromorphic computing with nanoscale spintronic oscillators
- (2017) Jacob Torrejon et al. NATURE
- Magnetic antiskyrmions above room temperature in tetragonal Heusler materials
- (2017) Ajaya K. Nayak et al. NATURE
- A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing
- (2017) Yoeri van de Burgt et al. NATURE MATERIALS
- Steep-slope hysteresis-free negative capacitance MoS2 transistors
- (2017) Mengwei Si et al. Nature Nanotechnology
- Quantum spin liquid states
- (2017) Yi Zhou et al. REVIEWS OF MODERN PHYSICS
- Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
- (2017) Feng Rao et al. SCIENCE
- Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues
- (2017) Pierre Noé et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Mesoscopic-Functionalization of Silk Fibroin with Gold Nanoclusters Mediated by Keratin and Bioinspired Silk Synapse
- (2017) Yao Xing et al. Small
- Memristive Devices with Highly Repeatable Analog States Boosted by Graphene Quantum Dots
- (2017) Changhong Wang et al. Small
- Flexible Ionic-Electronic Hybrid Oxide Synaptic TFTs with Programmable Dynamic Plasticity for Brain-Inspired Neuromorphic Computing
- (2017) Rohit Abraham John et al. Small
- Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer
- (2017) Xiaolong Zhao et al. Small
- Scaling vectors of attoJoule per bit modulators
- (2017) Volker J Sorger et al. Journal of Optics
- Physical origins of current and temperature controlled negative differential resistances in NbO2
- (2017) Suhas Kumar et al. Nature Communications
- Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
- (2017) Zhongnan Xi et al. Nature Communications
- Neuromorphic device architectures with global connectivity through electrolyte gating
- (2017) Paschalis Gkoupidenis et al. Nature Communications
- A novel true random number generator based on a stochastic diffusive memristor
- (2017) Hao Jiang et al. Nature Communications
- Probing nanoscale oxygen ion motion in memristive systems
- (2017) Yuchao Yang et al. Nature Communications
- Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
- (2017) Can Li et al. Nature Communications
- Reservoir computing using dynamic memristors for temporal information processing
- (2017) Chao Du et al. Nature Communications
- Multipurpose silicon photonics signal processor core
- (2017) Daniel Pérez et al. Nature Communications
- Face classification using electronic synapses
- (2017) Peng Yao et al. Nature Communications
- Learning through ferroelectric domain dynamics in solid-state synapses
- (2017) Sören Boyn et al. Nature Communications
- Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability
- (2017) Chaoxing Wu et al. Nature Communications
- Spin-orbit torque-driven skyrmion dynamics revealed by time-resolved X-ray microscopy
- (2017) Seonghoon Woo et al. Nature Communications
- Benchmarking organic mixed conductors for transistors
- (2017) Sahika Inal et al. Nature Communications
- Role of Ionic Functional Groups on Ion Transport at Perovskite Interfaces
- (2017) Yao Liu et al. Advanced Energy Materials
- Modeling triplet spike-timing-dependent plasticity using memristive devices
- (2017) Soraya Aghnout et al. Journal of Computational Electronics
- Encoding neural and synaptic functionalities in electron spin: A pathway to efficient neuromorphic computing
- (2017) Abhronil Sengupta et al. Applied Physics Reviews
- Advances in photonic reservoir computing
- (2017) Guy Van der Sande et al. Nanophotonics
- Stochastic Spiking Neural Networks Enabled by Magnetic Tunnel Junctions: From Nontelegraphic to Telegraphic Switching Regimes
- (2017) Chamika M. Liyanagedera et al. Physical Review Applied
- 1D π-d Conjugated Coordination Polymers for Multilevel Memory of Long-Term and High-Temperature Stability
- (2017) Xue-Feng Cheng et al. Advanced Electronic Materials
- Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic
- (2017) Yuchao Yang et al. Advanced Electronic Materials
- Investigation of the Impact of High Temperatures on the Switching Kinetics of Redox-Based Resistive Switching Cells using a High-Speed Nanoheater
- (2017) Moritz von Witzleben et al. Advanced Electronic Materials
- Neuromorphic Computing: Controllable Multiple Depression in a Graphene Oxide Artificial Synapse (Adv. Electron. Mater. 1/2017)
- (2017) Laiyuan Wang et al. Advanced Electronic Materials
- Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109
- (2017) Kyung Jean Yoon et al. Advanced Electronic Materials
- Processes and Effects of Oxygen and Moisture in Resistively Switching TaO x and HfO x
- (2017) Michael Lübben et al. Advanced Electronic Materials
- Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices
- (2017) Alexander Schönhals et al. Advanced Electronic Materials
- Graphene and Related Materials for Resistive Random Access Memories
- (2017) Fei Hui et al. Advanced Electronic Materials
- Rectification-Regulated Memristive Characteristics in Electron-Type CuPc-Based Element for Electrical Synapse
- (2017) Laiyuan Wang et al. Advanced Electronic Materials
- Resistive Switching in ZnO Nanorods/Graphene Oxide Hybrid Multilayer Structures
- (2017) Gopinathan Anoop et al. Advanced Electronic Materials
- Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures
- (2017) Le Wang et al. Advanced Electronic Materials
- Synaptic plasticity and learning behavior in transparent tungsten oxide-based memristors
- (2017) Bo Qu et al. MATERIALS & DESIGN
- On-chip photonic synapse
- (2017) Zengguang Cheng et al. Science Advances
- Highly Enhanced TMR Ratio and Δ for Double MgO-based p-MTJ Spin-Valves with Top Co2Fe6B2 Free Layer by Nanoscale-thick Iron Diffusion-barrier
- (2017) Seung-Eun Lee et al. Scientific Reports
- Magnetic Tunnel Junction as an On-Chip Temperature Sensor
- (2017) Abhronil Sengupta et al. Scientific Reports
- Oxide-based Synaptic Transistors Gated by Sol–Gel Silica Electrolytes
- (2016) Feng Shao et al. ACS Applied Materials & Interfaces
- Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium–Gallium–Zinc-Oxide Electric-Double-Layer Transistors
- (2016) Chang Jin Wan et al. ACS Applied Materials & Interfaces
- Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane
- (2016) Li Qiang Zhu et al. ACS Applied Materials & Interfaces
- Long-Term Synaptic Plasticity Emulated in Modified Graphene Oxide Electrolyte Gated IZO-Based Thin-Film Transistors
- (2016) Yi Yang et al. ACS Applied Materials & Interfaces
- Artificial Synapses Based on in-Plane Gate Organic Electrochemical Transistors
- (2016) Chuan Qian et al. ACS Applied Materials & Interfaces
- Tuning Ionic Transport in Memristive Devices by Graphene with Engineered Nanopores
- (2016) Jihang Lee et al. ACS Nano
- Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors
- (2016) Suhas Kumar et al. ACS Nano
- A Dynamically Reconfigurable Ambipolar Black Phosphorus Memory Device
- (2016) He Tian et al. ACS Nano
- Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy
- (2016) Marco Moors et al. ACS Nano
- Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric-Field Concentrators
- (2016) Byoung Kuk You et al. ACS Nano
- Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2
- (2016) Michael Hoffmann et al. ADVANCED FUNCTIONAL MATERIALS
- High-Speed and Low-Energy Nitride Memristors
- (2016) Byung Joon Choi et al. ADVANCED FUNCTIONAL MATERIALS
- Multistability in Bistable Ferroelectric Materials toward Adaptive Applications
- (2016) Anirban Ghosh et al. ADVANCED FUNCTIONAL MATERIALS
- Conductive Graphitic Channel in Graphene Oxide-Based Memristive Devices
- (2016) Sung Kyu Kim et al. ADVANCED FUNCTIONAL MATERIALS
- Li-Ion Synaptic Transistor for Low Power Analog Computing
- (2016) Elliot J. Fuller et al. ADVANCED MATERIALS
- Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
- (2016) Suhas Kumar et al. ADVANCED MATERIALS
- Colloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory
- (2016) Donghee Son et al. ADVANCED MATERIALS
- Phase-Change Memory Materials by Design: A Strain Engineering Approach
- (2016) Xilin Zhou et al. ADVANCED MATERIALS
- Ultra-Wideband Multi-Dye-Sensitized Upconverting Nanoparticles for Information Security Application
- (2016) Jongha Lee et al. ADVANCED MATERIALS
- Organometal Halide Perovskite Artificial Synapses
- (2016) Wentao Xu et al. ADVANCED MATERIALS
- Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory
- (2016) Sen Liu et al. ADVANCED MATERIALS
- Chemical ordering and large tunnel magnetoresistance in Co2FeAl/MgAl2O4/Co2FeAl(001) junctions
- (2016) Thomas Scheike et al. Applied Physics Express
- Off-state current reduction in NbO2-based selector device by using TiO2 tunneling barrier as an oxygen scavenger
- (2016) Minkook Kang et al. APPLIED PHYSICS LETTERS
- Multifunctional BiFeO3/TiO2 nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property
- (2016) Ayan Sarkar et al. APPLIED PHYSICS LETTERS
- Synaptic devices based on purely electronic memristors
- (2016) Ruobing Pan et al. APPLIED PHYSICS LETTERS
- Subquantum conductive-bridge memory
- (2016) John R. Jameson et al. APPLIED PHYSICS LETTERS
- Conductance quantization in an AgInSbTe-based memristor at nanosecond scale
- (2016) L. Jiang et al. APPLIED PHYSICS LETTERS
- Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory
- (2016) K. Kimura et al. APPLIED PHYSICS LETTERS
- Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
- (2016) Guangdong Zhou et al. APPLIED PHYSICS LETTERS
- Photo-controllable memristive behavior of graphene/diamond heterojunctions
- (2016) K. Ueda et al. APPLIED PHYSICS LETTERS
- Light sensitive memristor with bi-directional and wavelength-dependent conductance control
- (2016) P. Maier et al. APPLIED PHYSICS LETTERS
- Low power NiN-based resistive switching memory device using Ti doping
- (2016) Dong Su Jeon et al. APPLIED PHYSICS LETTERS
- Impacts of Co doping on ZnO transparent switching memory device characteristics
- (2016) Firman Mangasa Simanjuntak et al. APPLIED PHYSICS LETTERS
- Quantum point contacts and resistive switching in Ni/NiO nanowire junctions
- (2016) Sean M. Oliver et al. APPLIED PHYSICS LETTERS
- An accurate locally active memristor model for S-type negative differential resistance in NbOx
- (2016) Gary A. Gibson et al. APPLIED PHYSICS LETTERS
- Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product
- (2016) C. Grezes et al. APPLIED PHYSICS LETTERS
- Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance
- (2016) S. Kanai et al. APPLIED PHYSICS LETTERS
- Zinc Oxide Thin Films for Memristive Devices: A Review
- (2016) Marco Laurenti et al. CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES
- Intermixing during Epitaxial Growth of van der Waals Bonded Nominal GeTe/Sb2Te3 Superlattices
- (2016) Ruining Wang et al. CRYSTAL GROWTH & DESIGN
- Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT)
- (2016) J.S. An et al. ELECTRONICS LETTERS
- Printable ReRAM devices based on the non-stoichiometric junction CuS/Cu2−x S
- (2016) M. Congiu et al. ELECTRONICS LETTERS
- Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles
- (2016) Da-Ting Wang et al. IEEE ELECTRON DEVICE LETTERS
- Multilevel Resistive-Change Memory Operation of Al-Doped ZnO Thin-Film Transistor
- (2016) Won-Ho Lee et al. IEEE ELECTRON DEVICE LETTERS
- Light Induced Synaptic Transistor With Dual Operation Modes
- (2016) Yuanhang Li et al. IEEE ELECTRON DEVICE LETTERS
- Volatile and Non-Volatile Switching in Cu-SiO2Programmable Metallization Cells
- (2016) W. Chen et al. IEEE ELECTRON DEVICE LETTERS
- Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure
- (2016) Tsung-Ling Tsai et al. IEEE ELECTRON DEVICE LETTERS
- Short-Term Plasticity and Synaptic Filtering Emulated in Electrolyte-Gated IGZO Transistors
- (2016) Xiang Wan et al. IEEE ELECTRON DEVICE LETTERS
- TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing
- (2016) Jaesung Park et al. IEEE ELECTRON DEVICE LETTERS
- Silicon-Based Floating-Body Synaptic Transistor With Frequency-Dependent Short- and Long-Term Memories
- (2016) Hyungjin Kim et al. IEEE ELECTRON DEVICE LETTERS
- All Spin Artificial Neural Networks Based on Compound Spintronic Synapse and Neuron
- (2016) Deming Zhang et al. IEEE Transactions on Biomedical Circuits and Systems
- A Vision for All-Spin Neural Networks: A Device to System Perspective
- (2016) Abhronil Sengupta et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- Scalable Neuron Circuit Using Conductive-Bridge RAM for Pattern Reconstructions
- (2016) Jun-Woo Jang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Mimicking of pulse shape-dependent learning rules with a quantum dot memristor
- (2016) P. Maier et al. JOURNAL OF APPLIED PHYSICS
- Fluorinated graphene films with graphene quantum dots for electronic applications
- (2016) I. V. Antonova et al. JOURNAL OF APPLIED PHYSICS
- Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells
- (2016) Manuel Le Gallo et al. JOURNAL OF APPLIED PHYSICS
- A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure
- (2016) H. K. Li et al. JOURNAL OF APPLIED PHYSICS
- Low-temperature atomic layer deposition of TiO2 thin layers for the processing of memristive devices
- (2016) Samuele Porro et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Resistance random access memory
- (2016) Ting-Chang Chang et al. Materials Today
- Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes
- (2016) Haidong Lu et al. NANO LETTERS
- Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application
- (2016) Kyung Min Kim et al. NANO LETTERS
- A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States
- (2016) S. R. Nandakumar et al. NANO LETTERS
- Engineering incremental resistive switching in TaOxbased memristors for brain-inspired computing
- (2016) Zongwei Wang et al. Nanoscale
- Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions
- (2016) Rohit Soni et al. Nanoscale
- Negative capacitance in multidomain ferroelectric superlattices
- (2016) Pavlo Zubko et al. NATURE
- Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system
- (2016) Shunsuke Fukami et al. NATURE MATERIALS
- Observation of room-temperature magnetic skyrmions and their current-driven dynamics in ultrathin metallic ferromagnets
- (2016) Seonghoon Woo et al. NATURE MATERIALS
- Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
- (2016) Zhongrui Wang et al. NATURE MATERIALS
- Stochastic phase-change neurons
- (2016) Tomas Tuma et al. Nature Nanotechnology
- A fully reconfigurable photonic integrated signal processor
- (2016) Weilin Liu et al. Nature Photonics
- Control of spin–orbit torques through crystal symmetry in WTe2/ferromagnet bilayers
- (2016) D. MacNeill et al. Nature Physics
- Long-range mutual synchronization of spin Hall nano-oscillators
- (2016) A. A. Awad et al. Nature Physics
- A spiking and bursting neuron circuit based on memristor
- (2016) Yunus Babacan et al. NEUROCOMPUTING
- Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces
- (2016) Chuan-Sen Yang et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Antiferromagnetic Domain Wall Motion Driven by Spin-Orbit Torques
- (2016) Takayuki Shiino et al. PHYSICAL REVIEW LETTERS
- Spin-Transfer Torque Memories: Devices, Circuits, and Systems
- (2016) Xuanyao Fong et al. PROCEEDINGS OF THE IEEE
- Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing
- (2016) Takahiro Hanyu et al. PROCEEDINGS OF THE IEEE
- Skyrmion-Electronics: An Overview and Outlook
- (2016) Wang Kang et al. PROCEEDINGS OF THE IEEE
- Spintronic Nanodevices for Bioinspired Computing
- (2016) Julie Grollier et al. PROCEEDINGS OF THE IEEE
- Rewritable artificial magnetic charge ice
- (2016) Y.-L. Wang et al. SCIENCE
- Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
- (2016) Daniele Ielmini SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Nanoscale Plasmon-Enhanced Spectroscopy in Memristive Switches
- (2016) Giuliana Di Martino et al. Small
- Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
- (2016) Seungho Cho et al. Nature Communications
- Adaptive microwave impedance memory effect in a ferromagnetic insulator
- (2016) Hanju Lee et al. Nature Communications
- Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices
- (2016) Pavan Nukala et al. Nature Communications
- Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
- (2016) Wei Jin Hu et al. Nature Communications
- Generation of coherent spin-wave modes in yttrium iron garnet microdiscs by spin–orbit torque
- (2016) M. Collet et al. Nature Communications
- Striped nanoscale phase separation at the metal–insulator transition of heteroepitaxial nickelates
- (2016) G. Mattoni et al. Nature Communications
- Strain-engineered diffusive atomic switching in two-dimensional crystals
- (2016) Janne Kalikka et al. Nature Communications
- Artificial Synaptic Devices Based on Natural Chicken Albumen Coupled Electric-Double-Layer Transistors
- (2016) Guodong Wu et al. Scientific Reports
- Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices
- (2016) Barbara Casarin et al. Scientific Reports
- Investigation of switching region in superlattice phase change memories
- (2016) T. Ohyanagi et al. AIP Advances
- Recent progress in semiconductor excitable lasers for photonic spike processing
- (2016) Paul R. Prucnal et al. Advances in Optics and Photonics
- Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell
- (2016) Adnan Mehonic et al. Frontiers in Neuroscience
- Hybrid Spintronic-CMOS Spiking Neural Network with On-Chip Learning: Devices, Circuits, and Systems
- (2016) Abhronil Sengupta et al. Physical Review Applied
- High Magnetoresistance in Fully Epitaxial Magnetic Tunnel Junctions with a SemiconductingGaOxTunnel Barrier
- (2016) Norihiro Matsuo et al. Physical Review Applied
- Defining Switching Efficiency of Multilevel Resistive Memory with PdO as an Example
- (2016) K. D. M. Rao et al. Advanced Electronic Materials
- Synaptic Behavior in an Optoelectronic Device Based on Semiconductor-Nanotube Hybrid
- (2016) Kacper Pilarczyk et al. Advanced Electronic Materials
- Ternary Synaptic Plasticity Arising from Memdiode Behavior of TiOxSingle Nanowires
- (2016) De Shun Hong et al. Advanced Electronic Materials
- Multidimensional Simulation of Threshold Switching in NbO2Based on an Electric Field Triggered Thermal Runaway Model
- (2016) Carsten Funck et al. Advanced Electronic Materials
- Resistive Switching Memory: Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process (Adv. Electron. Mater. 1/2016)
- (2016) Astrid Marchewka et al. Advanced Electronic Materials
- Energy-Efficient Hybrid Perovskite Memristors and Synaptic Devices
- (2016) Zhengguo Xiao et al. Advanced Electronic Materials
- Memristors for Energy-Efficient New Computing Paradigms
- (2016) Doo Seok Jeong et al. Advanced Electronic Materials
- Organic core-sheath nanowire artificial synapses with femtojoule energy consumption
- (2016) W. Xu et al. Science Advances
- Regenerative memory in time-delayed neuromorphic photonic resonators
- (2016) B. Romeira et al. Scientific Reports
- A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy
- (2016) Steven Lequeux et al. Scientific Reports
- Magnetic Tunnel Junction Based Long-Term Short-Term Stochastic Synapse for a Spiking Neural Network with On-Chip STDP Learning
- (2016) Gopalakrishnan Srinivasan et al. Scientific Reports
- Magnetic Tunnel Junction Mimics Stochastic Cortical Spiking Neurons
- (2016) Abhronil Sengupta et al. Scientific Reports
- Atomic Layering, Intermixing and Switching Mechanism in Ge-Sb-Te based Chalcogenide Superlattices
- (2016) Xiaoming Yu et al. Scientific Reports
- Filamentary Switching: Synaptic Plasticity through Device Volatility
- (2015) Selina La Barbera et al. ACS Nano
- Origin of high thermal stability of amorphous Ge 1 Cu 2 Te 3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization
- (2015) Nian-Ke Chen et al. ACTA MATERIALIA
- How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?
- (2015) Felix Messerschmitt et al. ADVANCED FUNCTIONAL MATERIALS
- Strong Surface-Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions
- (2015) Hiroyuki Yamada et al. ADVANCED FUNCTIONAL MATERIALS
- Electrically Driven Random Laser Memory
- (2015) Cih-Su Wang et al. ADVANCED FUNCTIONAL MATERIALS
- Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices
- (2015) Hong Wang et al. ADVANCED FUNCTIONAL MATERIALS
- Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures
- (2015) Tohru Tsuruoka et al. ADVANCED FUNCTIONAL MATERIALS
- Biocompatible and Flexible Chitosan-Based Resistive Switching Memory with Magnesium Electrodes
- (2015) Niloufar Raeis Hosseini et al. ADVANCED FUNCTIONAL MATERIALS
- Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament
- (2015) Jui-Yuan Chen et al. ADVANCED MATERIALS
- Mechanism for Conducting Filament Growth in Self-Assembled Polymer Thin Films for Redox-Based Atomic Switches
- (2015) Karthik Krishnan et al. ADVANCED MATERIALS
- Memristive Physically Evolving Networks Enabling the Emulation of Heterosynaptic Plasticity
- (2015) Yuchao Yang et al. ADVANCED MATERIALS
- Simple, Inexpensive, and Rapid Approach to Fabricate Cross-Shaped Memristors Using an Inorganic-Nanowire-Digital-Alignment Technique and a One-Step Reduction Process
- (2015) Wentao Xu et al. ADVANCED MATERIALS
- Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices
- (2015) Michael Lübben et al. ADVANCED MATERIALS
- Synaptic Metaplasticity Realized in Oxide Memristive Devices
- (2015) Zheng-Hua Tan et al. ADVANCED MATERIALS
- Resistive Switching Behavior in Organic-Inorganic Hybrid CH3NH3PbI3−xClxPerovskite for Resistive Random Access Memory Devices
- (2015) Eun Ji Yoo et al. ADVANCED MATERIALS
- Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
- (2015) Jung Ho Yoon et al. ADVANCED MATERIALS
- Spin orbit torque based electronic neuron
- (2015) Abhronil Sengupta et al. APPLIED PHYSICS LETTERS
- Memristive operation mode of a site-controlled quantum dot floating gate transistor
- (2015) P. Maier et al. APPLIED PHYSICS LETTERS
- Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation
- (2015) Takeo Ohno et al. APPLIED PHYSICS LETTERS
- Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application
- (2015) Jeonghwan Song et al. APPLIED PHYSICS LETTERS
- Utilizing multiple state variables to improve the dynamic range of analog switching in a memristor
- (2015) YeonJoo Jeong et al. APPLIED PHYSICS LETTERS
- Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture
- (2015) Umesh Chand et al. APPLIED PHYSICS LETTERS
- Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications
- (2015) D. Y. Guo et al. APPLIED PHYSICS LETTERS
- Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications
- (2015) Yu-Chi Chang et al. APPLIED PHYSICS LETTERS
- Controllable spiking patterns in long-wavelength vertical cavity surface emitting lasers for neuromorphic photonics systems
- (2015) Antonio Hurtado et al. APPLIED PHYSICS LETTERS
- Giant enhancement of nanoscale thermal radiation based on hyperbolic graphene plasmons
- (2015) X. L. Liu et al. APPLIED PHYSICS LETTERS
- High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structures
- (2015) Shuai Li et al. APPLIED PHYSICS LETTERS
- Conducting mechanisms of forming-free TiW/Cu2O/Cu memristive devices
- (2015) P. Yan et al. APPLIED PHYSICS LETTERS
- Temporal information encoding in dynamic memristive devices
- (2015) Wen Ma et al. APPLIED PHYSICS LETTERS
- Development of Ag/WO3/ITO thin film memristor using spray pyrolysis method
- (2015) T. D. Dongale et al. Electronic Materials Letters
- Resistive switching mechanism in printed non-volatile Ag/ZrO2/ITO sandwiched structure
- (2015) M.N. Awais et al. ELECTRONICS LETTERS
- Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices
- (2015) Tsung-Ling Tsai et al. IEEE ELECTRON DEVICE LETTERS
- Degradation of Gate Voltage Controlled Multilevel Storage in One Transistor One Resistor Electrochemical Metallization Cell
- (2015) Xiaoxin Xu et al. IEEE ELECTRON DEVICE LETTERS
- Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid
- (2015) Kuan-Chang Chang et al. IEEE ELECTRON DEVICE LETTERS
- Galvanic Effect of Au–Ag Electrodes for Conductive Bridging Resistive Switching Memory
- (2015) Chi Cun Kuo et al. IEEE ELECTRON DEVICE LETTERS
- Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory
- (2015) Runchen Fang et al. IEEE ELECTRON DEVICE LETTERS
- Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems
- (2015) Adrien F. Vincent et al. IEEE Transactions on Biomedical Circuits and Systems
- Neuronal Synapse as a Memristor: Modeling Pair- and Triplet-Based STDP Rule
- (2015) Weiran Cai et al. IEEE Transactions on Biomedical Circuits and Systems
- Synchronous 8-bit Non-Volatile Full-Adder based on Spin Transfer Torque Magnetic Tunnel Junction
- (2015) Erya Deng et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- TrueNorth: Design and Tool Flow of a 65 mW 1 Million Neuron Programmable Neurosynaptic Chip
- (2015) Filipp Akopyan et al. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
- Analytical Macrospin Modeling of the Stochastic Switching Time of Spin-Transfer Torque Devices
- (2015) Adrien F. Vincent et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays
- (2015) Alessandro Grossi et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Thermally Robust Perpendicular STT-MRAM Free Layer Films Through Capping Layer Engineering
- (2015) Jimmy J. Kan et al. IEEE TRANSACTIONS ON MAGNETICS
- Roadmap for Emerging Materials for Spintronic Device Applications
- (2015) Atsufumi Hirohata et al. IEEE TRANSACTIONS ON MAGNETICS
- Design Optimization and Analysis of Multicontext STT-MTJ/CMOS Logic Circuits
- (2015) Erya Deng et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- STT-SNN: A Spin-Transfer-Torque Based Soft-Limiting Non-Linear Neuron for Low-Power Artificial Neural Networks
- (2015) Deliang Fan et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Stability and migration of small copper clusters in amorphous dielectrics
- (2015) David M. Guzman et al. JOURNAL OF APPLIED PHYSICS
- Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO3 thin films
- (2015) Yogesh Sharma et al. JOURNAL OF APPLIED PHYSICS
- Forming compliance dominated memristive switching through interfacial reaction in Ti/TiO2/Au structure
- (2015) Zhensen Tang et al. JOURNAL OF APPLIED PHYSICS
- Forming-free, bi-directional polarity conductive-bridge memory devices with Ge2Sb2Te5 solid-state electrolyte and Ag active electrode
- (2015) Yin-Hsien Huang et al. JOURNAL OF APPLIED PHYSICS
- Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias
- (2015) Wei-Kang Hsieh et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOx stack dielectric
- (2015) R. Mahapatra et al. MICROELECTRONIC ENGINEERING
- An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2
- (2015) Zhi Gen Yu et al. NANO LETTERS
- Experimental Demonstration of a Second-Order Memristor and Its Ability to Biorealistically Implement Synaptic Plasticity
- (2015) Sungho Kim et al. NANO LETTERS
- Atomic Scale Plasmonic Switch
- (2015) Alexandros Emboras et al. NANO LETTERS
- Interface formation of two- and three-dimensionally bonded materials in the case of GeTe–Sb2Te3 superlattices
- (2015) Jamo Momand et al. Nanoscale
- The straintronic spin-neuron
- (2015) Ayan K Biswas et al. NANOTECHNOLOGY
- Training and operation of an integrated neuromorphic network based on metal-oxide memristors
- (2015) M. Prezioso et al. NATURE
- New perspectives for Rashba spin–orbit coupling
- (2015) A. Manchon et al. NATURE MATERIALS
- Domain-wall velocities of up to 750 m s−1 driven by exchange-coupling torque in synthetic antiferromagnets
- (2015) See-Hun Yang et al. Nature Nanotechnology
- Memory on the racetrack
- (2015) Stuart Parkin et al. Nature Nanotechnology
- A new spin on magnetic memories
- (2015) Andrew D. Kent et al. Nature Nanotechnology
- Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
- (2015) Vinod K. Sangwan et al. Nature Nanotechnology
- Gate-tunable phase transitions in thin flakes of 1T-TaS2
- (2015) Yijun Yu et al. Nature Nanotechnology
- Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
- (2015) Anja Wedig et al. Nature Nanotechnology
- Integrated all-photonic non-volatile multi-level memory
- (2015) Carlos Ríos et al. Nature Photonics
- Adaptation to sensory input tunes visual cortex to criticality
- (2015) Woodrow L. Shew et al. Nature Physics
- Magnon spintronics
- (2015) A. V. Chumak et al. Nature Physics
- Self-organized van der Waals epitaxy of layered chalcogenide structures
- (2015) Yuta Saito et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system
- (2015) Shuang Gao et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Bioinspired Programming of Memory Devices for Implementing an Inference Engine
- (2015) Damien Querlioz et al. PROCEEDINGS OF THE IEEE
- Mott Memory and Neuromorphic Devices
- (2015) You Zhou et al. PROCEEDINGS OF THE IEEE
- Quantum transport in Rashba spin–orbit materials: a review
- (2015) Dario Bercioux et al. REPORTS ON PROGRESS IN PHYSICS
- Spin Hall effects
- (2015) Jairo Sinova et al. REVIEWS OF MODERN PHYSICS
- Giant multiferroic effects in topological GeTe-Sb2Te3superlattices
- (2015) Junji Tominaga et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications
- (2015) Biplab Sarkar et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Engineering of chalcogenide materials for embedded applications of Phase Change Memory
- (2015) Paola Zuliani et al. SOLID-STATE ELECTRONICS
- Improved resistive switching properties by nitrogen doping in tungsten oxide thin films
- (2015) Seok Man Hong et al. THIN SOLID FILMS
- Role of tantalum nitride as active top electrode in electroforming-free bipolar resistive switching behavior of cerium oxide-based memory cells
- (2015) Muhammad Ismail et al. THIN SOLID FILMS
- Metal oxide-resistive memory using graphene-edge electrodes
- (2015) Seunghyun Lee et al. Nature Communications
- Nanoscale memristive radiofrequency switches
- (2015) Shuang Pi et al. Nature Communications
- Oxygenated amorphous carbon for resistive memory applications
- (2015) Claudia A. Santini et al. Nature Communications
- Spectromicroscopic insights for rational design of redox-based memristive devices
- (2015) Christoph Baeumer et al. Nature Communications
- A steep-slope transistor based on abrupt electronic phase transition
- (2015) Nikhil Shukla et al. Nature Communications
- Engineering Mixed Ionic Electronic Conduction in La0.8Sr0.2MnO3+δNanostructures through Fast Grain Boundary Oxygen Diffusivity
- (2015) Aruppukottai M. Saranya et al. Advanced Energy Materials
- Deterministic Domain Wall Motion Orthogonal To Current Flow Due To Spin Orbit Torque
- (2015) Debanjan Bhowmik et al. Scientific Reports
- Modeling of switching mechanism in GeSbTe chalcogenide superlattices
- (2015) Xiaoming Yu et al. Scientific Reports
- Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device
- (2015) Yu-Fen Wang et al. Scientific Reports
- Flexible Sensory Platform Based on Oxide-based Neuromorphic Transistors
- (2015) Ning Liu et al. Scientific Reports
- Reversible Electric-Field-Driven Magnetic Domain-Wall Motion
- (2015) Kévin J. A. Franke et al. Physical Review X
- High Endurance and Multilevel Operation in Oxide Semiconductor-Based Resistive RAM Using Thin-Film Transistor as a Selector
- (2015) Y.-S. Fan et al. ECS Solid State Letters
- Multilevel resistance switching of individual Cu 2 S nanowires with inert electrodes
- (2015) Pei-Hsuan Liu et al. Nano Energy
- Oscillatory Neural Networks Based on TMO Nano-Oscillators and Multi-Level RRAM Cells
- (2015) Thomas C. Jackson et al. IEEE Journal on Emerging and Selected Topics in Circuits and Systems
- Spin-Transfer Torques Generated by the Anomalous Hall Effect and Anisotropic Magnetoresistance
- (2015) Tomohiro Taniguchi et al. Physical Review Applied
- Associative Learning with Temporal Contiguity in a Memristive Circuit for Large-Scale Neuromorphic Networks
- (2015) Yi Li et al. Advanced Electronic Materials
- Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers
- (2015) Mrinal K. Hota et al. Advanced Electronic Materials
- Organic Biomimicking Memristor for Information Storage and Processing Applications
- (2015) Gang Liu et al. Advanced Electronic Materials
- Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
- (2015) Ee Lim et al. Electronics
- A Microdot Multilayer Oxide Device: Let Us Tune the Strain-Ionic Transport Interaction
- (2014) Sebastian Schweiger et al. ACS Nano
- Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems
- (2014) Bin Gao et al. ACS Nano
- A Single Nanoscale Junction with Programmable Multilevel Memory
- (2014) Curtis O’Kelly et al. ACS Nano
- Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor
- (2014) Sungho Kim et al. ACS Nano
- Insights into Nanoscale Electrochemical Reduction in a Memristive Oxide: the Role of Three-Phase Boundaries
- (2014) Christian Lenser et al. ADVANCED FUNCTIONAL MATERIALS
- Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
- (2014) Haitao Sun et al. ADVANCED FUNCTIONAL MATERIALS
- Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO3) Memristors
- (2014) Hussein Nili et al. ADVANCED FUNCTIONAL MATERIALS
- Bipolar Electrochemical Mechanism for Mass Transfer in Nanoionic Resistive Memories
- (2014) Xuezeng Tian et al. ADVANCED MATERIALS
- Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory
- (2014) Daeseok Lee et al. ADVANCED MATERIALS
- Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory
- (2014) Stefano Ambrogio et al. ADVANCED MATERIALS
- Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices
- (2014) Anja Herpers et al. ADVANCED MATERIALS
- Tailoring Transient-Amorphous States: Towards Fast and Power-Efficient Phase-Change Memory and Neuromorphic Computing
- (2014) Tae Hoon Lee et al. ADVANCED MATERIALS
- Two-Terminal Protonic Devices with Synaptic-Like Short-Term Depression and Device Memory
- (2014) Erik E. Josberger et al. ADVANCED MATERIALS
- Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element
- (2014) Yuchao Yang et al. ADVANCED MATERIALS
- Tunable, Ultralow-Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene-Oxide Interface
- (2014) Min Qian et al. ADVANCED MATERIALS
- Spin dice: A scalable truly random number generator based on spintronics
- (2014) Akio Fukushima et al. Applied Physics Express
- Field induced rectification and memristive behavior of TlGaSe2 layered semiconductor
- (2014) MirHasan Yu. Seyidov et al. APPLIED PHYSICS LETTERS
- Electroforming-free resistive switching memory effect in transparent p-type tin monoxide
- (2014) M. K. Hota et al. APPLIED PHYSICS LETTERS
- High-performance ferroelectric memory based on fully patterned tunnel junctions
- (2014) S. Boyn et al. APPLIED PHYSICS LETTERS
- Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments
- (2014) L. Zhang et al. APPLIED PHYSICS LETTERS
- Charge transport and memristive properties of graphene quantum dots embedded in poly(3-hexylthiophene) matrix
- (2014) Alexandru Cosmin Obreja et al. APPLIED PHYSICS LETTERS
- Mechanism of localized electrical conduction at the onset of electroforming in TiO2 based resistive switching devices
- (2014) Mohammad Noman et al. APPLIED PHYSICS LETTERS
- Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability
- (2014) A. Belmonte et al. APPLIED PHYSICS LETTERS
- Bipolar resistance switching in Pt/CuOx/Pt via local electrochemical reduction
- (2014) Kenneth D'Aquila et al. APPLIED PHYSICS LETTERS
- Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory
- (2014) D. L. Xu et al. APPLIED PHYSICS LETTERS
- Bipolar resistive switching behavior of La0.5Sr0.5CoO3−σ films for nonvolatile memory applications
- (2014) Y. J. Fu et al. APPLIED PHYSICS LETTERS
- Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching device
- (2014) Ye Zhang et al. APPLIED PHYSICS LETTERS
- Resistive switching of a TaOx/TaON double layer via ionic control of carrier tunneling
- (2014) Heeyoung Jeon et al. APPLIED PHYSICS LETTERS
- Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories
- (2014) S. Gao et al. APPLIED PHYSICS LETTERS
- Resistive switching memories in MoS2 nanosphere assemblies
- (2014) Xiao-Yong Xu et al. APPLIED PHYSICS LETTERS
- Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications
- (2014) Min Zhu et al. APPLIED PHYSICS LETTERS
- Al-doped ZnO as a switching layer for transparent bipolar resistive switching memory
- (2014) Hyeongwoo Yu et al. Electronic Materials Letters
- Full ceramic micro solid oxide fuel cells: towards more reliable MEMS power generators operating at high temperatures
- (2014) I. Garbayo et al. Energy & Environmental Science
- Solution-Processed Chitosan-Gated IZO-Based Transistors for Mimicking Synaptic Plasticity
- (2014) Jumei Zhou et al. IEEE ELECTRON DEVICE LETTERS
- Laterally Coupled Synaptic Transistors Gated by Proton Conducting Sodium Alginate Films
- (2014) IEEE ELECTRON DEVICE LETTERS
- Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
- (2014) IEEE ELECTRON DEVICE LETTERS
- Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance
- (2014) Stefan Tappertzhofen et al. IEEE ELECTRON DEVICE LETTERS
- Current Conduction Mechanism of Nitrogen-Doped ${\rm AlO}_{x}$ RRAM
- (2014) Wanki Kim et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Electrochemical model of the polyaniline based organic memristive device
- (2014) V. A. Demin et al. JOURNAL OF APPLIED PHYSICS
- Improvement of resistive switching performances via an amorphous ZrO2 layer formation in TiO2-based forming-free resistive random access memory
- (2014) Baiwen Zeng et al. JOURNAL OF APPLIED PHYSICS
- Lateral photovoltaic effect co-observed with unipolar resistive switching behavior in Cu-doped ZnO film
- (2014) Jing Lu et al. JOURNAL OF APPLIED PHYSICS
- Current conduction and resistive switching characteristics of Sm2O3 and Lu2O3 thin films for low-power flexible memory applications
- (2014) Somnath Mondal et al. JOURNAL OF APPLIED PHYSICS
- Field-Induced Superconductivity in Electric Double Layer Transistors
- (2014) Kazunori Ueno et al. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
- (2014) F. Pan et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature
- (2014) Daniel J. R. Appleby et al. NANO LETTERS
- Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure
- (2014) Weiwei Gao et al. NANO LETTERS
- Revealing Controllable Nanowire Transformation through Cationic Exchange for RRAM Application
- (2014) Chun-Wei Huang et al. NANO LETTERS
- Ultrafast Characterization of Phase-Change Material Crystallization Properties in the Melt-Quenched Amorphous Phase
- (2014) Rakesh Jeyasingh et al. NANO LETTERS
- Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics
- (2014) Chang Jin Wan et al. Nanoscale
- Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches
- (2014) Jan van den Hurk et al. NANOTECHNOLOGY
- An optoelectronic framework enabled by low-dimensional phase-change films
- (2014) Peiman Hosseini et al. NATURE
- Metallization of vanadium dioxide driven by large phonon entropy
- (2014) John D. Budai et al. NATURE
- Spin-transfer torque generated by a topological insulator
- (2014) A. R. Mellnik et al. NATURE
- Negative capacitance in a ferroelectric capacitor
- (2014) Asif Islam Khan et al. NATURE MATERIALS
- Layered memristive and memcapacitive switches for printable electronics
- (2014) Alexander A. Bessonov et al. NATURE MATERIALS
- Magnetization switching through giant spin–orbit torque in a magnetically doped topological insulator heterostructure
- (2014) Yabin Fan et al. NATURE MATERIALS
- Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields
- (2014) Guoqiang Yu et al. Nature Nanotechnology
- Spin–orbit torques in action
- (2014) Arne Brataas et al. Nature Nanotechnology
- On the SET/RESET current asymmetry in electrochemical metallization memory cells
- (2014) Stephan Menzel et al. Physica Status Solidi-Rapid Research Letters
- Role of the nano amorphous interface in the crystallization of Sb2Te3 towards non-volatile phase change memory: insights from first principles
- (2014) Xue-Peng Wang et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- A review of molecular modelling of electric double layer capacitors
- (2014) Ryan Burt et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Spin Hall torque magnetometry of Dzyaloshinskii domain walls
- (2014) Satoru Emori et al. PHYSICAL REVIEW B
- Simulation of crystallization inGe2Sb2Te5: A memory effect in the canonical phase-change material
- (2014) J. Kalikka et al. PHYSICAL REVIEW B
- A million spiking-neuron integrated circuit with a scalable communication network and interface
- (2014) P. A. Merolla et al. SCIENCE
- Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio
- (2014) L. Zhong et al. SOLID-STATE ELECTRONICS
- Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions
- (2014) Rohit Soni et al. Nature Communications
- Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
- (2014) Yuchao Yang et al. Nature Communications
- Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping
- (2014) Jian Shi et al. Nature Communications
- Deterministic arbitrary switching of polarization in a ferroelectric thin film
- (2014) R. K. Vasudevan et al. Nature Communications
- Dislocation motion and grain boundary migration in two-dimensional tungsten disulphide
- (2014) Amin Azizi et al. Nature Communications
- Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour
- (2014) Yoshitaka Aoki et al. Nature Communications
- Ionic field effect and memristive phenomena in single-point ferroelectric domain switching
- (2014) Anton V. Ievlev et al. Nature Communications
- Nanowire spin torque oscillator driven by spin orbit torques
- (2014) Zheng Duan et al. Nature Communications
- Time-resolved magnetic sensing with electronic spins in diamond
- (2014) A. Cooper et al. Nature Communications
- Artificial synapse network on inorganic proton conductor for neuromorphic systems
- (2014) Li Qiang Zhu et al. Nature Communications
- Ferroelectric tunnel junctions for information storage and processing
- (2014) Vincent Garcia et al. Nature Communications
- Chiral spin torque arising from proximity-induced magnetization
- (2014) Kwang-Su Ryu et al. Nature Communications
- One order of magnitude faster phase change at reduced power in Ti-Sb-Te
- (2014) Min Zhu et al. Nature Communications
- Broadband Polarization-Independent Perfect Absorber Using a Phase-Change Metamaterial at Visible Frequencies
- (2014) Tun Cao et al. Scientific Reports
- Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems
- (2014) Yi Li et al. Scientific Reports
- A ZnTaOx Based Resistive Switching Random Access Memory
- (2014) K. Zheng et al. ECS Solid State Letters
- Chitosan-based biopolysaccharide proton conductors for synaptic transistors on paper substrates
- (2014) Guodong Wu et al. Journal of Materials Chemistry C
- Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors
- (2014) Jian-Chiun Liou et al. Nanoscale Research Letters
- Internet of Things for Smart Cities
- (2014) Andrea Zanella et al. IEEE Internet of Things Journal
- Noninvasive Measurement of Membrane Potential Modulation in Microorganisms: Photosynthesis in Green Algae
- (2013) Eun-Hee Lee et al. ACS Nano
- Giant Electroresistance of Super-tetragonal BiFeO3-Based Ferroelectric Tunnel Junctions
- (2013) Hiroyuki Yamada et al. ACS Nano
- Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories
- (2013) Stefan Tappertzhofen et al. ACS Nano
- Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes
- (2013) Cheng-Lin Tsai et al. ACS Nano
- Domain Wall Conduction and Polarization-Mediated Transport in Ferroelectrics
- (2013) Rama K. Vasudevan et al. ADVANCED FUNCTIONAL MATERIALS
- Advanced Photoassisted Atomic Switches Produced Using ITO Nanowire Electrodes and Molten Photoconductive Organic Semiconductors
- (2013) Annop Klamchuen et al. ADVANCED MATERIALS
- A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices
- (2013) Jinjoo Park et al. ADVANCED MATERIALS
- The Memristive Properties of a Single VO2Nanowire with Switching Controlled by Self-Heating
- (2013) Sung-Hwan Bae et al. ADVANCED MATERIALS
- An All-Optical, Non-volatile, Bidirectional, Phase-Change Meta-Switch
- (2013) Behrad Gholipour et al. ADVANCED MATERIALS
- Logic Computation in Phase Change Materials by Threshold and Memory Switching
- (2013) M. Cassinerio et al. ADVANCED MATERIALS
- A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation
- (2013) Shimeng Yu et al. ADVANCED MATERIALS
- Reliable Metal Deposition into TiO2Nanotubes for Leakage-Free Interdigitated Electrode Structures and Use as a Memristive Electrode
- (2013) Ning Liu et al. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
- Utilizing NDR effect to reduce switching threshold variations in memristive devices
- (2013) Fabien Alibart et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Effects of moisture barriers on resistive switching in Pt-dispersed SiO2 nanometallic thin films
- (2013) Byung Joon Choi et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Dynamic switching mechanism of conduction/set process in Cu/a-Si/Si memristive device
- (2013) Ligang Gao et al. APPLIED PHYSICS LETTERS
- Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film
- (2013) Ayan Kar et al. APPLIED PHYSICS LETTERS
- Origin of the unusual reflectance and density contrasts in the phase-change material Cu2GeTe3
- (2013) J. M. Skelton et al. APPLIED PHYSICS LETTERS
- Resistive switching artificially induced in a dielectric/ferroelectric composite diode
- (2013) Atsushi Tsurumaki-Fukuchi et al. APPLIED PHYSICS LETTERS
- Emulating the Ebbinghaus forgetting curve of the human brain with a NiO-based memristor
- (2013) S. G. Hu et al. APPLIED PHYSICS LETTERS
- Optical contrast and laser-induced phase transition in GeCu2Te3 thin film
- (2013) Yuta Saito et al. APPLIED PHYSICS LETTERS
- Memory diodes with nonzero crossing
- (2013) Shimon Saraf et al. APPLIED PHYSICS LETTERS
- Atomic-level quantized reaction of HfOx memristor
- (2013) Yong-En Syu et al. APPLIED PHYSICS LETTERS
- Low voltage resistive switching devices based on chemically produced silicon oxide
- (2013) Can Li et al. APPLIED PHYSICS LETTERS
- Resistive switching characteristics in printed Cu/CuO/(AgO)/Ag memristors
- (2013) S. Zou et al. ELECTRONICS LETTERS
- Internet of Things (IoT): A vision, architectural elements, and future directions
- (2013) Jayavardhana Gubbi et al. Future Generation Computer Systems-The International Journal of eScience
- Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in ${\rm TaO}_{x}$ Bipolar-ReRAM
- (2013) Takeki Ninomiya et al. IEEE ELECTRON DEVICE LETTERS
- Short-Term Memory to Long-Term Memory Transition Mimicked in IZO Homojunction Synaptic Transistors
- (2013) Liqiang Guo et al. IEEE ELECTRON DEVICE LETTERS
- Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches
- (2013) You Zhou et al. IEEE ELECTRON DEVICE LETTERS
- Synaptic Behaviors Mimicked in Flexible Oxide-Based Transistors on Plastic Substrates
- (2013) Jumei Zhou et al. IEEE ELECTRON DEVICE LETTERS
- A Leaky Integrate-and-Fire Laser Neuron for Ultrafast Cognitive Computing
- (2013) Mitchell A. Nahmias et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme
- (2013) Takashi Ohsawa et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current
- (2013) Takeki Ninomiya et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell
- (2013) Attilio Belmonte et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Immunity to Device Variations in a Spiking Neural Network With Memristive Nanodevices
- (2013) Damien Querlioz et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- 64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention
- (2013) Xizhen Zhang et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Physics of the Voltage Constant in Multilevel Switching of Conductive Bridge Resistive Memory
- (2013) Tong Liu et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures
- (2013) Xavier Saura et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films
- (2013) Dinglin Xu et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions
- (2013) Ping Sun et al. JOURNAL OF APPLIED PHYSICS
- Mimic synaptic behavior with a single floating gate transistor: A MemFlash synapse
- (2013) Martin Ziegler et al. JOURNAL OF APPLIED PHYSICS
- Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films
- (2013) Deyi Fu et al. JOURNAL OF APPLIED PHYSICS
- Cation-based resistance change memory
- (2013) Ilia Valov et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Low-power non-volatile spintronic memory: STT-RAM and beyond
- (2013) K L Wang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Correlation effects in two-dimensional topological insulators
- (2013) M Hohenadler et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Bipolar resistive switching behaviors in Cr-doped ZnO films
- (2013) Ding Lin Xu et al. MICROELECTRONIC ENGINEERING
- Measurement and analysis of substrate leakage current of RF mems capacitive switches
- (2013) Y.Q. Zhu et al. MICROELECTRONICS RELIABILITY
- Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
- (2013) Jui-Yuan Chen et al. NANO LETTERS
- Nanoscale Plasmonic Memristor with Optical Readout Functionality
- (2013) Alexandros Emboras et al. NANO LETTERS
- Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells
- (2013) Deok-Yong Cho et al. Nanoscale
- Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors
- (2013) Chang Jin Wan et al. Nanoscale
- Synaptic electronics: materials, devices and applications
- (2013) Duygu Kuzum et al. NANOTECHNOLOGY
- Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold
- (2013) Hyungkwang Lim et al. NANOTECHNOLOGY
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
- (2013) Arend M. van der Zande et al. NATURE MATERIALS
- Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions
- (2013) Zheng Wen et al. NATURE MATERIALS
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Current-driven dynamics of chiral ferromagnetic domain walls
- (2013) Satoru Emori et al. NATURE MATERIALS
- Spin-torque building blocks
- (2013) N. Locatelli et al. NATURE MATERIALS
- Chiral spin torque at magnetic domain walls
- (2013) Kwang-Su Ryu et al. Nature Nanotechnology
- Topological properties and dynamics of magnetic skyrmions
- (2013) Naoto Nagaosa et al. Nature Nanotechnology
- Intermittency, quasiperiodicity and chaos in probe-induced ferroelectric domain switching
- (2013) A. V. Ievlev et al. Nature Physics
- Exploring hyper-cubic energy landscapes in thermally active finite artificial spin-ice systems
- (2013) A. Farhan et al. Nature Physics
- The Sensory Neurons of Touch
- (2013) Victoria E. Abraira et al. NEURON
- Mg-doped VO2 nanoparticles: hydrothermal synthesis, enhanced visible transmittance and decreased metal–insulator transition temperature
- (2013) Jiadong Zhou et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Electric-double-layer field-effect transistors with ionic liquids
- (2013) Takuya Fujimoto et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- From point to extended defects in two-dimensional MoS2: Evolution of atomic structure under electron irradiation
- (2013) Hannu-Pekka Komsa et al. PHYSICAL REVIEW B
- Improvement of resistive switching in ZnO film by Ti doping
- (2013) Hongxia Li et al. THIN SOLID FILMS
- Theoretical models of synaptic short term plasticity
- (2013) Matthias H. Hennig Frontiers in Computational Neuroscience
- Nanobatteries in redox-based resistive switches require extension of memristor theory
- (2013) I. Valov et al. Nature Communications
- A correlated nickelate synaptic transistor
- (2013) Jian Shi et al. Nature Communications
- Pattern classification by memristive crossbar circuits using ex situ and in situ training
- (2013) Fabien Alibart et al. Nature Communications
- Chaotic Boltzmann machines
- (2013) Hideyuki Suzuki et al. Scientific Reports
- Multimode Resistive Switching in Single ZnO Nanoisland System
- (2013) Jing Qi et al. Scientific Reports
- Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system
- (2013) Sizhao Li et al. Journal of Materials Chemistry C
- Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition
- (2013) Adnan Younis et al. Nanoscale Research Letters
- Ferroelectric Order Control of the Dirac-Semimetal Phase in GeTe-Sb2Te3Superlattices
- (2013) J. Tominaga et al. Advanced Materials Interfaces
- Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors
- (2012) Feng Miao et al. ACS Nano
- On-Demand Nanodevice with Electrical and Neuromorphic Multifunction Realized by Local Ion Migration
- (2012) Rui Yang et al. ACS Nano
- ZnO1–x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application
- (2012) Chi-Hsin Huang et al. ACS Nano
- Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi1-δFeO3 Interfaces
- (2012) Atsushi Tsurumaki et al. ADVANCED FUNCTIONAL MATERIALS
- Beyond von-Neumann Computing with Nanoscale Phase-Change Memory Devices
- (2012) C. David Wright et al. ADVANCED FUNCTIONAL MATERIALS
- Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor
- (2012) Zhong Qiang Wang et al. ADVANCED FUNCTIONAL MATERIALS
- Controlling the Synaptic Plasticity of a Cu2S Gap-Type Atomic Switch
- (2012) Alpana Nayak et al. ADVANCED FUNCTIONAL MATERIALS
- A Natural Silk Fibroin Protein-Based Transparent Bio-Memristor
- (2012) Mrinal K. Hota et al. ADVANCED FUNCTIONAL MATERIALS
- Comment onReal-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte- Based ReRAM
- (2012) Ilia Valov et al. ADVANCED MATERIALS
- Multistate Memory Devices Based on Free-standing VO2/TiO2 Microstructures Driven by Joule Self-Heating
- (2012) Luca Pellegrino et al. ADVANCED MATERIALS
- The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System
- (2012) Patryk Krzysteczko et al. ADVANCED MATERIALS
- A Light-Controlled Resistive Switching Memory
- (2012) Mariana Ungureanu et al. ADVANCED MATERIALS
- A Carbon Nanotube Synapse with Dynamic Logic and Learning
- (2012) Kyunghyun Kim et al. ADVANCED MATERIALS
- High Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer
- (2012) Guenole Jan et al. Applied Physics Express
- Unipolar resistive switching behavior of Pt/LixZn1−xO/Pt resistive random access memory devices controlled by various defect types
- (2012) Chun-Cheng Lin et al. APPLIED PHYSICS LETTERS
- Resistive switching characteristics of nickel silicide layer embedded HfO2 film
- (2012) Debashis Panda et al. APPLIED PHYSICS LETTERS
- Memristive operation mode of floating gate transistors: A two-terminal MemFlash-cell
- (2012) M. Ziegler et al. APPLIED PHYSICS LETTERS
- Spin transfer torque devices utilizing the giant spin Hall effect of tungsten
- (2012) Chi-Feng Pai et al. APPLIED PHYSICS LETTERS
- Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices
- (2012) Jung-Kyu Lee et al. APPLIED PHYSICS LETTERS
- Roles of Schottky barrier and oxygen vacancies in the electroforming of SrTiO3
- (2012) Xin Guo APPLIED PHYSICS LETTERS
- Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
- (2012) H. Sato et al. APPLIED PHYSICS LETTERS
- Photonic non-volatile memories using phase change materials
- (2012) Wolfram H. P. Pernice et al. APPLIED PHYSICS LETTERS
- Switching dynamics and charge transport studies of resistive random access memory devices
- (2012) Branden Long et al. APPLIED PHYSICS LETTERS
- Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films
- (2012) Myung Soo Lee et al. APPLIED PHYSICS LETTERS
- Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
- (2012) S. Kanai et al. APPLIED PHYSICS LETTERS
- The Quantum Point-Contact Memristor
- (2012) E. Miranda et al. IEEE ELECTRON DEVICE LETTERS
- A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory
- (2012) Ki Chul Chun et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology
- (2012) Ximeng Guan et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
- (2012) Stefano Larentis et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Spin-Based Neuron Model With Domain-Wall Magnets as Synapse
- (2012) M. Sharad et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Effect of incorporating copper on resistive switching properties of ZnO films
- (2012) C.H. Jia et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure
- (2012) W. Zhu et al. JOURNAL OF APPLIED PHYSICS
- Enhancement of perpendicular magnetic anisotropy in FeB free layers using a thin MgO cap layer
- (2012) Hitoshi Kubota et al. JOURNAL OF APPLIED PHYSICS
- A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device
- (2012) Jana Münchenberger et al. JOURNAL OF APPLIED PHYSICS
- Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism
- (2012) Ming-Chi Wu et al. JOURNAL OF APPLIED PHYSICS
- Pinned interface dipole-induced tunneling electroresistance in ferroelectric tunnel junctions: A theoretical investigation
- (2012) Yin-Zhong Wu JOURNAL OF APPLIED PHYSICS
- Physical aspects of low power synapses based on phase change memory devices
- (2012) Manan Suri et al. JOURNAL OF APPLIED PHYSICS
- Simulation of multilevel switching in electrochemical metallization memory cells
- (2012) Stephan Menzel et al. JOURNAL OF APPLIED PHYSICS
- Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure
- (2012) C. Chen et al. JOURNAL OF APPLIED PHYSICS
- Resistive switching in silicon suboxide films
- (2012) Adnan Mehonic et al. JOURNAL OF APPLIED PHYSICS
- Nitrogen-doped graphene nanosheets as anode materials for lithium ion batteries: a first-principles study
- (2012) Congcong Ma et al. JOURNAL OF MATERIALS CHEMISTRY
- Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories
- (2012) I. Valov et al. JOURNAL OF SOLID STATE ELECTROCHEMISTRY
- Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe4N, and Half-Metallic Ferromagnet: A Systematic Analysis
- (2012) Satoshi Kokado et al. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
- Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes
- (2012) Woon Ik Park et al. NANO LETTERS
- Ferroelectricity in Simple Binary ZrO2 and HfO2
- (2012) Johannes Müller et al. NANO LETTERS
- Ferroelectric Tunnel Memristor
- (2012) D. J. Kim et al. NANO LETTERS
- Tunable threshold resistive switching characteristics of Pt–Fe2O3core–shell nanoparticleassembly by space charge effect
- (2012) Yoon-Jae Baek et al. Nanoscale
- Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
- (2012) Matthew D Pickett et al. NANOTECHNOLOGY
- Electrically tailored resistance switching in silicon oxide
- (2012) Adnan Mehonic et al. NANOTECHNOLOGY
- The ‘Higgs’ amplitude mode at the two-dimensional superfluid/Mott insulator transition
- (2012) Manuel Endres et al. NATURE
- Linking synchronization to self-assembly using magnetic Janus colloids
- (2012) Jing Yan et al. NATURE
- Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial
- (2012) Mengkun Liu et al. NATURE
- A scalable neuristor built with Mott memristors
- (2012) Matthew D. Pickett et al. NATURE MATERIALS
- A ferroelectric memristor
- (2012) André Chanthbouala et al. NATURE MATERIALS
- Magnetic nano-oscillator driven by pure spin current
- (2012) Vladislav E. Demidov et al. NATURE MATERIALS
- Reversible electrical switching of spin polarization in multiferroic tunnel junctions
- (2012) D. Pantel et al. NATURE MATERIALS
- Current-induced torques in magnetic materials
- (2012) Arne Brataas et al. NATURE MATERIALS
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Phase diagram of the ultrafast photoinduced insulator-metal transition in vanadium dioxide
- (2012) T. L. Cocker et al. PHYSICAL REVIEW B
- Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect
- (2012) Luqiao Liu et al. PHYSICAL REVIEW LETTERS
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Breaking the Speed Limits of Phase-Change Memory
- (2012) D. Loke et al. SCIENCE
- Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum
- (2012) L. Liu et al. SCIENCE
- Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device
- (2012) Hongwei Xie et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Hopping and trap controlled conduction in Cr-doped SrTiO3 thin films
- (2012) Bach Thang Phan et al. SOLID-STATE ELECTRONICS
- Resistive switching in zinc–tin-oxide
- (2012) Santosh Murali et al. SOLID-STATE ELECTRONICS
- Observation of conducting filament growth in nanoscale resistive memories
- (2012) Yuchao Yang et al. Nature Communications
- Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation
- (2012) Hai Yang Peng et al. Scientific Reports
- VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY IN SPINTRONIC DEVICES
- (2012) PEDRAM KHALILI AMIRI et al. SPIN
- Grain Boundary Mapping in Polycrystalline Graphene
- (2011) Kwanpyo Kim et al. ACS Nano
- Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
- (2011) Ting Chang et al. ACS Nano
- Two- and Three-Terminal Resistive Switches: Nanometer-Scale Memristors and Memistors
- (2011) Qiangfei Xia et al. ADVANCED FUNCTIONAL MATERIALS
- Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
- (2011) Tohru Tsuruoka et al. ADVANCED FUNCTIONAL MATERIALS
- A Memristive Nanoparticle/Organic Hybrid Synapstor for Neuroinspired Computing
- (2011) Fabien Alibart et al. ADVANCED FUNCTIONAL MATERIALS
- Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
- (2011) Stephan Menzel et al. ADVANCED FUNCTIONAL MATERIALS
- In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory
- (2011) Sang-Jun Choi et al. ADVANCED MATERIALS
- Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory
- (2011) Seo Hyoung Chang et al. ADVANCED MATERIALS
- Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
- (2011) Feng Miao et al. ADVANCED MATERIALS
- Design Rules for Phase-Change Materials in Data Storage Applications
- (2011) Dominic Lencer et al. ADVANCED MATERIALS
- Arithmetic and Biologically-Inspired Computing Using Phase-Change Materials
- (2011) C. David Wright et al. ADVANCED MATERIALS
- Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions
- (2011) Zheng Yang et al. Annual Review of Materials Research
- Synaptic behaviors and modeling of a metal oxide memristive device
- (2011) Ting Chang et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
- (2011) Asif Islam Khan et al. APPLIED PHYSICS LETTERS
- Metal-insulator transition and electrically driven memristive characteristics of SmNiO3 thin films
- (2011) Sieu D. Ha et al. APPLIED PHYSICS LETTERS
- Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes
- (2011) Wootae Lee et al. APPLIED PHYSICS LETTERS
- Effects of ferroelectric dead layer on the electron transport in ferroelectric tunneling junctions
- (2011) Ping Sun et al. APPLIED PHYSICS LETTERS
- Memristor device based on carbon nanotubes decorated with gold nanoislands
- (2011) A. Radoi et al. APPLIED PHYSICS LETTERS
- Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments
- (2011) Gun Hwan Kim et al. APPLIED PHYSICS LETTERS
- Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire
- (2011) T. Suzuki et al. APPLIED PHYSICS LETTERS
- Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device
- (2011) Insung Kim et al. APPLIED PHYSICS LETTERS
- Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model
- (2011) Shimeng Yu et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- In situ synthesis of MoS2/graphene nanosheet composites with extraordinarily high electrochemical performance for lithium ion batteries
- (2011) Kun Chang et al. CHEMICAL COMMUNICATIONS
- Magnetic domain wall motion by spin transfer
- (2011) Julie Grollier et al. COMPTES RENDUS PHYSIQUE
- Memristor Logic Operation Gate With Share Contact RRAM Cell
- (2011) Wen Chao Shen et al. IEEE ELECTRON DEVICE LETTERS
- A Resist-Protection-Oxide Transistor With Adaptable Low-Frequency Noise for Stochastic Neuromorphic Computation in VLSI
- (2011) Tang-Jung Chiu et al. IEEE ELECTRON DEVICE LETTERS
- Analysis of Transient Currents During Ultrafast Switching of $\hbox{TiO}_{2}$ Nanocrossbar Devices
- (2011) C. Hermes et al. IEEE ELECTRON DEVICE LETTERS
- Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in $\hbox{TiO}_{2}$-Based Unipolar Resistive Memory
- (2011) Liang Zhao et al. IEEE ELECTRON DEVICE LETTERS
- Co-Occurrence of Threshold Switching and Memory Switching in $\hbox{Pt}/\hbox{NbO}_{x}/\hbox{Pt}$ Cells for Crosspoint Memory Applications
- (2011) Xinjun Liu et al. IEEE ELECTRON DEVICE LETTERS
- Linear Scaling of Reset Current Down to 22-nm Node for a Novel $\hbox{Cu}_{x}\hbox{Si}_{y}\hbox{O}$ RRAM
- (2011) L. M. Yang et al. IEEE ELECTRON DEVICE LETTERS
- An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation
- (2011) Shimeng Yu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth
- (2011) Daniele Ielmini IEEE TRANSACTIONS ON ELECTRON DEVICES
- Reset Current Scaling in Phase-Change Memory Cells: Modeling and Experiments
- (2011) Carlo Bergonzoni et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Electrode dependence of filament formation in HfO2 resistive-switching memory
- (2011) Kuan-Liang Lin et al. JOURNAL OF APPLIED PHYSICS
- Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories
- (2011) Dai-Ying Lee et al. JOURNAL OF APPLIED PHYSICS
- Device characterization of correlated electron random access memories
- (2011) Christopher R. McWilliams et al. JOURNAL OF APPLIED PHYSICS
- Accurate Simulations of Electric Double Layer Capacitance of Ultramicroelectrodes
- (2011) Hainan Wang et al. Journal of Physical Chemistry C
- Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles
- (2011) L Shi et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Nanomagnet logic: progress toward system-level integration
- (2011) M T Niemier et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Evidence of Crystallization–Induced Segregation in the Phase Change Material Te-Rich GST
- (2011) Anthony Debunne et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices
- (2011) Hu Young Jeong et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Polar Charges Induced Electric Hysteresis of ZnO Nano/Microwire for Fast Data Storage
- (2011) Jinhui Song et al. NANO LETTERS
- Dynamic Conductivity of Ferroelectric Domain Walls in BiFeO3
- (2011) Peter Maksymovych et al. NANO LETTERS
- Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing
- (2011) Duygu Kuzum et al. NANO LETTERS
- Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires
- (2011) Li He et al. NANO LETTERS
- Measuring the switching dynamics and energy efficiency of tantalum oxide memristors
- (2011) John Paul Strachan et al. NANOTECHNOLOGY
- Switching kinetics of a Cu2S-based gap-type atomic switch
- (2011) Alpana Nayak et al. NANOTECHNOLOGY
- Electrochemical metallization memories—fundamentals, applications, prospects
- (2011) Ilia Valov et al. NANOTECHNOLOGY
- Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
- (2011) Kyungah Seo et al. NANOTECHNOLOGY
- TiO2—a prototypical memristive material
- (2011) K Szot et al. NANOTECHNOLOGY
- Sub-nanosecond switching of a tantalum oxide memristor
- (2011) Antonio C Torrezan et al. NANOTECHNOLOGY
- Grains and grain boundaries in single-layer graphene atomic patchwork quilts
- (2011) Pinshane Y. Huang et al. NATURE
- Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
- (2011) Ioan Mihai Miron et al. NATURE
- Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves
- (2011) Yasuhiro Fukuma et al. NATURE MATERIALS
- Interface-induced room-temperature multiferroicity in BaTiO3
- (2011) S. Valencia et al. NATURE MATERIALS
- Disorder-induced localization in crystalline phase-change materials
- (2011) T. Siegrist et al. NATURE MATERIALS
- Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
- (2011) Takeo Ohno et al. NATURE MATERIALS
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Interfacial phase-change memory
- (2011) R. E. Simpson et al. Nature Nanotechnology
- Scalable nanostructured membranes for solid-oxide fuel cells
- (2011) Masaru Tsuchiya et al. Nature Nanotechnology
- Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities
- (2011) A. Chanthbouala et al. Nature Physics
- Dynamics of VLSI analog decoupled neurons
- (2011) Luciana Carota NEUROCOMPUTING
- Ultrafast optical pulse shaping: A tutorial review
- (2011) Andrew M. Weiner OPTICS COMMUNICATIONS
- Thermochemical resistive switching: materials, mechanisms, and scaling projections
- (2011) Daniele Ielmini et al. PHASE TRANSITIONS
- Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer
- (2011) Sangsu Park et al. Physica Status Solidi-Rapid Research Letters
- Bulk and surface nucleation processes in Ag2S conductance switches
- (2011) M. Morales-Masis et al. PHYSICAL REVIEW B
- Density functional theory study of TiO2/Ag interfaces and their role in memristor devices
- (2011) Stefano Prada et al. PHYSICAL REVIEW B
- Ab InitioComputer Simulation of the Early Stages of Crystallization: Application toGe2Sb2Te5Phase-Change Materials
- (2011) T. H. Lee et al. PHYSICAL REVIEW LETTERS
- Clocking the Melting Transition of Charge and Lattice Order in1T−TaS2with Ultrafast Extreme-Ultraviolet Angle-Resolved Photoemission Spectroscopy
- (2011) J. C. Petersen et al. PHYSICAL REVIEW LETTERS
- Electric-Field-Induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure
- (2011) J. T. Heron et al. PHYSICAL REVIEW LETTERS
- A biophysically-based neuromorphic model of spike rate- and timing-dependent plasticity
- (2011) G. Rachmuth et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- Quantum frustration in organic Mott insulators: from spin liquids to unconventional superconductors
- (2011) B J Powell et al. REPORTS ON PROGRESS IN PHYSICS
- Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes
- (2011) F. Xiong et al. SCIENCE
- A Major Constituent of Brown Algae for Use in High-Capacity Li-Ion Batteries
- (2011) I. Kovalenko et al. SCIENCE
- Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application
- (2011) Cheng Peng et al. SCRIPTA MATERIALIA
- Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications
- (2011) M.H. Tang et al. SOLID-STATE ELECTRONICS
- Grain boundary-driven leakage path formation in HfO2 dielectrics
- (2011) G. Bersuker et al. SOLID-STATE ELECTRONICS
- Carbon-doped GeTe: A promising material for Phase-Change Memories
- (2011) G. Betti Beneventi et al. SOLID-STATE ELECTRONICS
- Resistive switching behavior of (Zn1−xMgx)O films prepared by sol–gel processes
- (2011) Hsin-Chuan Cheng et al. THIN SOLID FILMS
- Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells
- (2011) Xianwen Sun et al. Nanoscale Research Letters
- Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
- (2010) Qi Liu et al. ACS Nano
- Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells
- (2010) Chang-Po Hsiung et al. ACS Nano
- Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor
- (2010) Zhi Xu et al. ACS Nano
- Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching
- (2010) J. Joshua Yang et al. ADVANCED MATERIALS
- Direct Identification of the Conducting Channels in a Functioning Memristive Device
- (2010) John Paul Strachan et al. ADVANCED MATERIALS
- Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
- (2010) Ruth Muenstermann et al. ADVANCED MATERIALS
- Learning Abilities Achieved by a Single Solid-State Atomic Switch
- (2010) Tsuyoshi Hasegawa et al. ADVANCED MATERIALS
- Two-Terminal Carbon Nanotube Programmable Devices for Adaptive Architectures
- (2010) Guillaume Agnus et al. ADVANCED MATERIALS
- Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
- (2010) Seunghyup Lee et al. APPLIED PHYSICS LETTERS
- Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions
- (2010) H. D. Gan et al. APPLIED PHYSICS LETTERS
- Metal-insulator transition in epitaxial V1−xWxO2(0≤x≤0.33) thin films
- (2010) Keisuke Shibuya et al. APPLIED PHYSICS LETTERS
- Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
- (2010) L. Goux et al. APPLIED PHYSICS LETTERS
- Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films
- (2010) Hu Young Jeong et al. APPLIED PHYSICS LETTERS
- Nanoscale imaging and control of resistance switching in VO2 at room temperature
- (2010) Jeehoon Kim et al. APPLIED PHYSICS LETTERS
- Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode
- (2010) Jiun-Jia Huang et al. APPLIED PHYSICS LETTERS
- Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
- (2010) C. Chen et al. APPLIED PHYSICS LETTERS
- High switching endurance in TaOx memristive devices
- (2010) J. Joshua Yang et al. APPLIED PHYSICS LETTERS
- Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction
- (2010) Sungho Kim et al. APPLIED PHYSICS LETTERS
- Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device
- (2010) Hsin-Hung Huang et al. APPLIED PHYSICS LETTERS
- The Internet of Things: A survey
- (2010) Luigi Atzori et al. Computer Networks
- A review on electrochemical double-layer capacitors
- (2010) Pawan Sharma et al. ENERGY CONVERSION AND MANAGEMENT
- Phase-change random access memory: A scalable technology
- (2010) S. Raoux et al. IBM JOURNAL OF RESEARCH AND DEVELOPMENT
- Overview of candidate device technologies for storage-class memory
- (2010) G. W. Burr et al. IBM JOURNAL OF RESEARCH AND DEVELOPMENT
- A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
- (2010) Shimeng Yu et al. IEEE ELECTRON DEVICE LETTERS
- Optoelectronic and all-optical multiple memory states in vanadium dioxide
- (2010) Horacio Coy et al. JOURNAL OF APPLIED PHYSICS
- Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise
- (2010) R. Soni et al. JOURNAL OF APPLIED PHYSICS
- Multilevel resistive switching in Ti/CuxO/Pt memory devices
- (2010) Sheng-Yu Wang et al. JOURNAL OF APPLIED PHYSICS
- Metal-insulator transition characteristics of VO2 thin films grown on Ge(100) single crystals
- (2010) Z. Yang et al. JOURNAL OF APPLIED PHYSICS
- Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch
- (2010) Alpana Nayak et al. Journal of Physical Chemistry Letters
- Crystallization dynamics of as-deposited amorphous AgInSbTe thin film induced by picosecond laser pulses
- (2010) Huan Huang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- A review of conduction phenomena in Li-ion batteries
- (2010) Myounggu Park et al. JOURNAL OF POWER SOURCES
- Mn3O4−Graphene Hybrid as a High-Capacity Anode Material for Lithium Ion Batteries
- (2010) Hailiang Wang et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Symmetry Relationship and Strain-Induced Transitions between Insulating M1 and M2 and Metallic R phases of Vanadium Dioxide
- (2010) A. Tselev et al. NANO LETTERS
- Reversible Resistive Switching and Multilevel Recording in La0.7Sr0.3MnO3Thin Films for Low Cost Nonvolatile Memories
- (2010) César Moreno et al. NANO LETTERS
- Nanoscale Memristor Device as Synapse in Neuromorphic Systems
- (2010) Sung Hyun Jo et al. NANO LETTERS
- Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer
- (2010) Sheng-Yu Wang et al. NANOTECHNOLOGY
- Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer
- (2010) Ioan Mihai Miron et al. NATURE MATERIALS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- An extended defect in graphene as a metallic wire
- (2010) Jayeeta Lahiri et al. Nature Nanotechnology
- Direct observation of magnetic monopole defects in an artificial spin-ice system
- (2010) S. Ladak et al. Nature Physics
- Emergent complex neural dynamics
- (2010) Dante R. Chialvo Nature Physics
- Rapid Domain Wall Motion in Permalloy Nanowires Excited by a Spin-Polarized Current Applied Perpendicular to the Nanowire
- (2010) C. T. Boone et al. PHYSICAL REVIEW LETTERS
- Phase Change Memory
- (2010) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- (2010) Hiroyuki Akinaga et al. PROCEEDINGS OF THE IEEE
- Dynamics of Magnetic Domain Walls Under Their Own Inertia
- (2010) L. Thomas et al. SCIENCE
- Ferroelectric Control of Spin Polarization
- (2010) V. Garcia et al. SCIENCE
- Two-dimensional superconductivity at a Mott insulator/band insulator interface LaTiO3/SrTiO3
- (2010) J. Biscaras et al. Nature Communications
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Effects of the compliance current on the resistive switching behavior of TiO2 thin films
- (2009) X. Cao et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Time-dependent electroforming in NiO resistive switching devices
- (2009) Gyoung-Ho Buh et al. APPLIED PHYSICS LETTERS
- Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals
- (2009) APPLIED PHYSICS LETTERS
- Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices
- (2009) Min Kyu Yang et al. APPLIED PHYSICS LETTERS
- Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
- (2009) C. Schindler et al. APPLIED PHYSICS LETTERS
- Electrical field induced precipitation reaction and percolation in Ag30Ge17Se53 amorphous electrolyte films
- (2009) Liang Chen et al. APPLIED PHYSICS LETTERS
- Nonvolatile resistive switching in spinel ZnMn2O4 and ilmenite ZnMnO3
- (2009) Haiyang Peng et al. APPLIED PHYSICS LETTERS
- Nanosecond switching in GeTe phase change memory cells
- (2009) G. Bruns et al. APPLIED PHYSICS LETTERS
- Multilevel resistive switching with ionic and metallic filaments
- (2009) Ming Liu et al. APPLIED PHYSICS LETTERS
- Unipolar resistive switching characteristics of room temperature grown SnO2 thin films
- (2009) Kazuki Nagashima et al. APPLIED PHYSICS LETTERS
- Phase Change Materials and Their Application to Nonvolatile Memories
- (2009) Simone Raoux et al. CHEMICAL REVIEWS
- Carbon-based materials as supercapacitor electrodes
- (2009) Li Li Zhang et al. CHEMICAL SOCIETY REVIEWS
- Influence of Crystalline Constituent on Resistive Switching Properties of TiO[sub 2] Memory Films
- (2009) Wen-Yuan Chang et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Nanoscale Resistive Switching of a Copper–Carbon-Mixed Layer for Nonvolatile Memory Applications
- (2009) Hyejung Choi et al. IEEE ELECTRON DEVICE LETTERS
- Elimination of Forming Process for TiOx Nonvolatile Memory Devices
- (2009) W. Wang et al. IEEE ELECTRON DEVICE LETTERS
- $\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode
- (2009) Heng Yuan Lee et al. IEEE ELECTRON DEVICE LETTERS
- Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion
- (2009) Xiaobin Wang et al. IEEE ELECTRON DEVICE LETTERS
- Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
- (2009) H.Y. Lee et al. IEEE ELECTRON DEVICE LETTERS
- Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells
- (2009) Ludovic Goux et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Nonlinear Auto-Oscillator Theory of Microwave Generation by Spin-Polarized Current
- (2009) A. Slavin et al. IEEE TRANSACTIONS ON MAGNETICS
- Preparation, characterisation and structure of Ti and Al ultrathin oxide films on metals
- (2009) Qi-Hui Wu et al. INTERNATIONAL REVIEWS IN PHYSICAL CHEMISTRY
- Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
- (2009) Ch. Walczyk et al. JOURNAL OF APPLIED PHYSICS
- A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5
- (2009) M. Boniardi et al. JOURNAL OF APPLIED PHYSICS
- Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications
- (2009) Xun Cao et al. JOURNAL OF APPLIED PHYSICS
- Synthesis and size-dependent crystallization of colloidal germanium telluridenanoparticles
- (2009) Marissa A. Caldwell et al. JOURNAL OF MATERIALS CHEMISTRY
- On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects
- (2009) Gokul Gopalakrishnan et al. JOURNAL OF MATERIALS SCIENCE
- Membrane Potential Changes in Dendritic Spines during Action Potentials and Synaptic Input
- (2009) L. M. Palmer et al. JOURNAL OF NEUROSCIENCE
- QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
- (2009) Paolo Giannozzi et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Depressed Phase Transition in Solution-Grown VO2Nanostructures
- (2009) Luisa Whittaker et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- High-Density Crossbar Arrays Based on a Si Memristive System
- (2009) Sung Hyun Jo et al. NANO LETTERS
- Relative Influence of Surface States and Bulk Impurities on the Electrical Properties of Ge Nanowires
- (2009) Shixiong Zhang et al. NANO LETTERS
- Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory
- (2009) Myoung-Jae Lee et al. NANO LETTERS
- Surface-Stress-Induced Mott Transition and Nature of Associated Spatial Phase Transition in Single Crystalline VO2Nanowires
- (2009) Jung Inn Sohn et al. NANO LETTERS
- Printable Thin Film Supercapacitors Using Single-Walled Carbon Nanotubes
- (2009) Martti Kaempgen et al. NANO LETTERS
- Giant tunnel electroresistance for non-destructive readout of ferroelectric states
- (2009) V. Garcia et al. NATURE
- Enhancement of ferroelectricity at metal–oxide interfaces
- (2009) Massimiliano Stengel et al. NATURE MATERIALS
- Frequency tunable near-infrared metamaterials based on VO_2 phase transition
- (2009) Matthew J. Dicken et al. OPTICS EXPRESS
- Statistical characterization of the memory effect in polyfluorene based non-volatile resistive memory devices
- (2009) Bao Lei et al. ORGANIC ELECTRONICS
- Quasiparticle band structures of the antiferromagnetic transition-metal oxides MnO, FeO, CoO, and NiO
- (2009) C. Rödl et al. PHYSICAL REVIEW B
- Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film
- (2009) S. H. Chang et al. PHYSICAL REVIEW LETTERS
- Domain Wall Spin Torquemeter
- (2009) I. M. Miron et al. PHYSICAL REVIEW LETTERS
- Anisotropic Structure Deformation in theVO2Metal-Insulator Transition
- (2009) Jamie M. Booth et al. PHYSICAL REVIEW LETTERS
- High Domain Wall Velocities due to Spin Currents Perpendicular to the Plane
- (2009) A. V. Khvalkovskiy et al. PHYSICAL REVIEW LETTERS
- Observation of the Role of Subcritical Nuclei in Crystallization of a Glassy Solid
- (2009) B.-S. Lee et al. SCIENCE
- Memory Metamaterials
- (2009) T. Driscoll et al. SCIENCE
- Conduction mechanism of leakage current due to the traps in ZrO2thin film
- (2009) Yohan Seo et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Resistive Switching and Metallic-Filament Formation in Ag2S Nanowire Transistors
- (2009) Zhi-Min Liao et al. Small
- Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers
- (2008) Ting Zhang et al. APPLIED PHYSICS LETTERS
- Low current resistive switching in Cu–SiO2 cells
- (2008) C. Schindler et al. APPLIED PHYSICS LETTERS
- Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
- (2008) Wen-Yuan Chang et al. APPLIED PHYSICS LETTERS
- Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
- (2008) Nuo Xu et al. APPLIED PHYSICS LETTERS
- Fast phase transitions induced by picosecond electrical pulses on phase change memory cells
- (2008) W. J. Wang et al. APPLIED PHYSICS LETTERS
- Organic photovoltaic cells based on an acceptor of soluble graphene
- (2008) Qian Liu et al. APPLIED PHYSICS LETTERS
- Demonstration of multilevel cell spin transfer switching in MgO magnetic tunnel junctions
- (2008) Xiaohua Lou et al. APPLIED PHYSICS LETTERS
- Direct observation of oxygen movement during resistance switching in NiO/Pt film
- (2008) Chikako Yoshida et al. APPLIED PHYSICS LETTERS
- Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
- (2008) S. Ikeda et al. APPLIED PHYSICS LETTERS
- Direct observation of conducting filaments on resistive switching of NiO thin films
- (2008) J. Y. Son et al. APPLIED PHYSICS LETTERS
- High-mobility, low-power, and fast-switching organic field-effect transistors with ionic liquids
- (2008) S. Ono et al. APPLIED PHYSICS LETTERS
- Structure Effects on Resistive Switching of $ \hbox{Al/TiO}_{x}/\hbox{Al}$ Devices for RRAM Applications
- (2008) Lee-Eun Yu et al. IEEE ELECTRON DEVICE LETTERS
- Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$
- (2008) Weihua Guan et al. IEEE ELECTRON DEVICE LETTERS
- A Ferroelectric Gate Field Effect Transistor with a ZnO/Pb(Zr,Ti)O3Heterostructure Formed on a Silicon Substrate
- (2008) Hiroyuki Tanaka et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
- (2008) Doo Seok Jeong et al. JOURNAL OF APPLIED PHYSICS
- Electrode-dependent electrical properties of metal/Nb-doped SrTiO3 junctions
- (2008) C. Park et al. JOURNAL OF APPLIED PHYSICS
- Current-induced domain wall motion
- (2008) G.S.D. Beach et al. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
- Development of lanthanum strontium manganite perovskite cathode materials of solid oxide fuel cells: a review
- (2008) San Ping Jiang JOURNAL OF MATERIALS SCIENCE
- Magnetic Tunnel Junctions with Ferroelectric Barriers: Prediction of Four Resistance States from First Principles
- (2008) Julian P. Velev et al. NANO LETTERS
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- Collapse of magnetic moment drives the Mott transition in MnO
- (2008) Jan Kuneš et al. NATURE MATERIALS
- Resonant bonding in crystalline phase-change materials
- (2008) Kostiantyn Shportko et al. NATURE MATERIALS
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
- Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices
- (2008) Alina M. Deac et al. Nature Physics
- Giant spin-accumulation signal and pure spin-current-induced reversible magnetization switching
- (2008) Tao Yang et al. Nature Physics
- Compact silicon neuron circuit with spiking and bursting behaviour
- (2008) Jayawan H.B. Wijekoon et al. NEURAL NETWORKS
- Micrometer x-ray diffraction study ofVO2films: Separation between metal-insulator transition and structural phase transition
- (2008) Bong-Jun Kim et al. PHYSICAL REVIEW B
- Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
- (2008) I. H. Inoue et al. PHYSICAL REVIEW B
- Another mechanism for the insulator-metal transition observed in Mott insulators
- (2008) Alexander G. Gavriliuk et al. PHYSICAL REVIEW B
- Theory of a continuous Mott transition in two dimensions
- (2008) T. Senthil PHYSICAL REVIEW B
- Photoemission evidence for a Mott-Hubbard metal-insulator transition inVO2
- (2008) R. Eguchi et al. PHYSICAL REVIEW B
- Single-Shot Time-Resolved Measurements of Nanosecond-Scale Spin-Transfer Induced Switching: Stochastic Versus Deterministic Aspects
- (2008) T. Devolder et al. PHYSICAL REVIEW LETTERS
- Coupling Efficiency for Phase Locking of a Spin Transfer Nano-Oscillator to a Microwave Current
- (2008) B. Georges et al. PHYSICAL REVIEW LETTERS
- Electric Manipulation of Spin Relaxation Using the Spin Hall Effect
- (2008) K. Ando et al. PHYSICAL REVIEW LETTERS
- Magnetic Domain-Wall Racetrack Memory
- (2008) S. S. P. Parkin et al. SCIENCE
- Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
- (2007) Sayeef Salahuddin et al. NANO LETTERS
- Synaptic plasticity, memory and the hippocampus: a neural network approach to causality
- (2007) Guilherme Neves et al. NATURE REVIEWS NEUROSCIENCE
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search