Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices
出版年份 2018 全文链接
标题
Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 113, Issue 2, Pages 023105
出版商
AIP Publishing
发表日期
2018-07-12
DOI
10.1063/1.5030780
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