Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

标题
Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 6, Pages 630-632
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-04-25
DOI
10.1109/led.2014.2316806

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