标题
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
作者
关键词
-
出版物
Electronics
Volume 4, Issue 3, Pages 586-613
出版商
MDPI AG
发表日期
2015-09-10
DOI
10.3390/electronics4030586
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications
- (2015) D. Y. Guo et al. APPLIED PHYSICS LETTERS
- Physical principles and current status of emerging non-volatile solid state memories
- (2015) L. Wang et al. Electronic Materials Letters
- Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory
- (2015) Runchen Fang et al. IEEE ELECTRON DEVICE LETTERS
- Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias
- (2015) Wei-Kang Hsieh et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOx stack dielectric
- (2015) R. Mahapatra et al. MICROELECTRONIC ENGINEERING
- Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films
- (2015) J. Blasco et al. MICROELECTRONICS RELIABILITY
- Memory leads the way to better computing
- (2015) H.-S. Philip Wong et al. Nature Nanotechnology
- Improved resistive switching properties by nitrogen doping in tungsten oxide thin films
- (2015) Seok Man Hong et al. THIN SOLID FILMS
- Role of tantalum nitride as active top electrode in electroforming-free bipolar resistive switching behavior of cerium oxide-based memory cells
- (2015) Muhammad Ismail et al. THIN SOLID FILMS
- First principle simulations on the effects of oxygen vacancy in HfO2-based RRAM
- (2015) Yuehua Dai et al. AIP Advances
- Multilevel unipolar resistive memory switching in amorphous SmGdO3 thin film
- (2014) Yogesh Sharma et al. APPLIED PHYSICS LETTERS
- Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching device
- (2014) Ye Zhang et al. APPLIED PHYSICS LETTERS
- Resistive switching of a TaOx/TaON double layer via ionic control of carrier tunneling
- (2014) Heeyoung Jeon et al. APPLIED PHYSICS LETTERS
- Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
- (2014) IEEE ELECTRON DEVICE LETTERS
- Current Conduction Mechanism of Nitrogen-Doped ${\rm AlO}_{x}$ RRAM
- (2014) Wanki Kim et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Analysis of the Voltage–Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching
- (2014) Peng Huang et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Resistive Switching and Current Conduction Mechanisms in Amorphous LaLuO3 Thin Films Grown by Pulsed Laser Deposition
- (2014) Pankaj Misra et al. INTEGRATED FERROELECTRICS
- Unipolar resistive switching behavior of amorphous YCrO3 films for nonvolatile memory applications
- (2014) Yogesh Sharma et al. JOURNAL OF APPLIED PHYSICS
- Improvement of resistive switching performances via an amorphous ZrO2 layer formation in TiO2-based forming-free resistive random access memory
- (2014) Baiwen Zeng et al. JOURNAL OF APPLIED PHYSICS
- Current conduction and resistive switching characteristics of Sm2O3 and Lu2O3 thin films for low-power flexible memory applications
- (2014) Somnath Mondal et al. JOURNAL OF APPLIED PHYSICS
- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
- (2014) F. Pan et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio
- (2014) L. Zhong et al. SOLID-STATE ELECTRONICS
- A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope
- (2014) Mario Lanza Materials
- A Review on Conduction Mechanisms in Dielectric Films
- (2014) Fu-Chien Chiu Advances in Materials Science and Engineering
- A ZnTaOx Based Resistive Switching Random Access Memory
- (2014) K. Zheng et al. ECS Solid State Letters
- Forming-free bipolar resistive switching in nonstoichiometric ceria films
- (2014) Muhammad Ismail et al. Nanoscale Research Letters
- Atomic-level quantized reaction of HfOx memristor
- (2013) Yong-En Syu et al. APPLIED PHYSICS LETTERS
- Charge Transport and Degradation in HfO2 and HfOx Dielectrics
- (2013) Andrea Padovani et al. IEEE ELECTRON DEVICE LETTERS
- Cation-based resistance change memory
- (2013) Ilia Valov et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Measurement and analysis of substrate leakage current of RF mems capacitive switches
- (2013) Y.Q. Zhu et al. MICROELECTRONICS RELIABILITY
- Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch
- (2013) Byung Joon Choi et al. NANO LETTERS
- Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale
- (2013) Ilia Valov ChemElectroChem
- Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices
- (2012) Jung-Kyu Lee et al. APPLIED PHYSICS LETTERS
- Switching dynamics and charge transport studies of resistive random access memory devices
- (2012) Branden Long et al. APPLIED PHYSICS LETTERS
- The Quantum Point-Contact Memristor
- (2012) E. Miranda et al. IEEE ELECTRON DEVICE LETTERS
- A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations
- (2012) Ximeng Guan et al. IEEE ELECTRON DEVICE LETTERS
- Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
- (2012) Stefano Larentis et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- The 3-D Stacking Bipolar RRAM for High Density
- (2012) Yi-Chung Chen et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure
- (2012) W. Zhu et al. JOURNAL OF APPLIED PHYSICS
- Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure
- (2012) C. Chen et al. JOURNAL OF APPLIED PHYSICS
- Resistive switching in silicon suboxide films
- (2012) Adnan Mehonic et al. JOURNAL OF APPLIED PHYSICS
- Redox-Based Resistive Switching Memories
- (2012) Rainer Waser JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Electrically tailored resistance switching in silicon oxide
- (2012) Adnan Mehonic et al. NANOTECHNOLOGY
- Hopping and trap controlled conduction in Cr-doped SrTiO3 thin films
- (2012) Bach Thang Phan et al. SOLID-STATE ELECTRONICS
- An Extended Unified Schottky-Poole-Frenkel Theory to Explain the Current-Voltage Characteristics of Thin Film Metal-Insulator-Metal Capacitors with Examples for Various High-k Dielectric Materials
- (2012) W. S. Lau ECS Journal of Solid State Science and Technology
- Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
- (2011) Stephan Menzel et al. ADVANCED FUNCTIONAL MATERIALS
- A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect
- (2011) Bin Gao et al. APPLIED PHYSICS LETTERS
- Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model
- (2011) Shimeng Yu et al. APPLIED PHYSICS LETTERS
- Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth
- (2011) Daniele Ielmini IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks
- (2011) L. Vandelli et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current
- (2011) Wei-Chih Chien et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Electrochemical metallization memories—fundamentals, applications, prospects
- (2011) Ilia Valov et al. NANOTECHNOLOGY
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Grain boundary-driven leakage path formation in HfO2 dielectrics
- (2011) G. Bersuker et al. SOLID-STATE ELECTRONICS
- Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
- (2010) Seunghyup Lee et al. APPLIED PHYSICS LETTERS
- Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
- (2010) C. Chen et al. APPLIED PHYSICS LETTERS
- Multilevel resistive switching in Ti/CuxO/Pt memory devices
- (2010) Sheng-Yu Wang et al. JOURNAL OF APPLIED PHYSICS
- Effects of the compliance current on the resistive switching behavior of TiO2 thin films
- (2009) X. Cao et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Nonvolatile resistive switching in spinel ZnMn2O4 and ilmenite ZnMnO3
- (2009) Haiyang Peng et al. APPLIED PHYSICS LETTERS
- Unipolar resistive switching characteristics of room temperature grown SnO2 thin films
- (2009) Kazuki Nagashima et al. APPLIED PHYSICS LETTERS
- $\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode
- (2009) Heng Yuan Lee et al. IEEE ELECTRON DEVICE LETTERS
- Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
- (2009) H.Y. Lee et al. IEEE ELECTRON DEVICE LETTERS
- Conduction mechanism of leakage current due to the traps in ZrO2thin film
- (2009) Yohan Seo et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted
- (2008) Qi Liu et al. APPLIED PHYSICS LETTERS
- Structure Effects on Resistive Switching of $ \hbox{Al/TiO}_{x}/\hbox{Al}$ Devices for RRAM Applications
- (2008) Lee-Eun Yu et al. IEEE ELECTRON DEVICE LETTERS
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