A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
出版年份 2011 全文链接
标题
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
作者
关键词
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出版物
NATURE MATERIALS
Volume 10, Issue 8, Pages 625-630
出版商
Springer Nature
发表日期
2011-07-11
DOI
10.1038/nmat3070
参考文献
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