A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

标题
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
作者
关键词
-
出版物
NATURE MATERIALS
Volume 10, Issue 8, Pages 625-630
出版商
Springer Nature
发表日期
2011-07-11
DOI
10.1038/nmat3070

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