Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system
出版年份 2015 全文链接
标题
Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system
作者
关键词
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出版物
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 17, Issue 19, Pages 12849-12856
出版商
Royal Society of Chemistry (RSC)
发表日期
2015-04-17
DOI
10.1039/c5cp01235j
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