Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

出版年份 2016 全文链接

标题

作者

关键词

出版物

Volume 16, Issue 11, Pages 6724-6732

出版商

American Chemical Society (ACS)

发表日期

2016-09-23

DOI

10.1021/acs.nanolett.6b01781

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