标题
Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume 30, Issue 29, Pages 1800957
出版商
Wiley
发表日期
2018-06-08
DOI
10.1002/adma.201800957
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Limits to the rate of oxygen transport in mixed-conducting oxides
- (2017) Roger A. De Souza Journal of Materials Chemistry A
- Water-Induced Decoupling of Tracer and Electrochemical Oxygen Exchange Kinetics on Mixed Conducting Electrodes
- (2016) Andreas Nenning et al. Journal of Physical Chemistry Letters
- Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices
- (2016) C. Baeumer et al. Nanoscale
- How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?
- (2015) Felix Messerschmitt et al. ADVANCED FUNCTIONAL MATERIALS
- Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices
- (2015) Michael Lübben et al. ADVANCED MATERIALS
- Training and operation of an integrated neuromorphic network based on metal-oxide memristors
- (2015) M. Prezioso et al. NATURE
- Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO3 thin films
- (2015) N. Raab et al. AIP Advances
- Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process
- (2015) Astrid Marchewka et al. Advanced Electronic Materials
- Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories
- (2013) Stefan Tappertzhofen et al. ACS Nano
- Effects of moisture barriers on resistive switching in Pt-dispersed SiO2 nanometallic thin films
- (2013) Byung Joon Choi et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Electro-degradation and resistive switching of Fe-doped SrTiO3 single crystal
- (2013) M. Wojtyniak et al. JOURNAL OF APPLIED PHYSICS
- Behavior of oxygen vacancies in single-crystal SrTiO3: Equilibrium distribution and diffusion kinetics
- (2012) Roger A. De Souza et al. PHYSICAL REVIEW B
- Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
- (2011) Stephan Menzel et al. ADVANCED FUNCTIONAL MATERIALS
- Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
- (2010) Ruth Muenstermann et al. ADVANCED MATERIALS
- Strongly enhanced incorporation of oxygen into barium titanate based multilayer ceramic capacitors using water vapor
- (2010) M. Kessel et al. APPLIED PHYSICS LETTERS
- Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
- (2010) L. Goux et al. APPLIED PHYSICS LETTERS
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- The mechanism of electroforming of metal oxide memristive switches
- (2009) J Joshua Yang et al. NANOTECHNOLOGY
- How Is Oxygen Incorporated into Oxides? A Comprehensive Kinetic Study of a Simple Solid-State Reaction with SrTiO3as a Model Material
- (2008) Rotraut Merkle et al. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
- Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
- (2008) Doo Seok Jeong et al. JOURNAL OF APPLIED PHYSICS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started