Metal-insulator transition characteristics of VO2 thin films grown on Ge(100) single crystals
出版年份 2010 全文链接
标题
Metal-insulator transition characteristics of VO2 thin films grown on Ge(100) single crystals
作者
关键词
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出版物
JOURNAL OF APPLIED PHYSICS
Volume 108, Issue 7, Pages 073708
出版商
AIP Publishing
发表日期
2010-10-12
DOI
10.1063/1.3492716
参考文献
相关参考文献
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- Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
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- Semiconductor-metal transition characteristics of VO2 thin films grown on c- and r-sapphire substrates
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- Effects of strain on the electronic structure ofVO2
- (2010) Bence Lazarovits et al. PHYSICAL REVIEW B
- Limits on vanadium oxide Mott metal–insulator transition field-effect transistors
- (2010) S. Hormoz et al. SOLID-STATE ELECTRONICS
- Very large anisotropy in the dc conductivity of epitaxial VO2 thin films grown on (011) rutile TiO2 substrates
- (2009) Jiwei Lu et al. APPLIED PHYSICS LETTERS
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- (2009) T. Driscoll et al. APPLIED PHYSICS LETTERS
- Semiconductor to metal transition characteristics of VO2 thin films grown epitaxially on Si (001)
- (2009) A. Gupta et al. APPLIED PHYSICS LETTERS
- Dispersive capacitance and conductance across the phase transition boundary in metal-vanadium oxide-silicon devices
- (2009) Changhyun Ko et al. JOURNAL OF APPLIED PHYSICS
- Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions
- (2009) Dmitry Ruzmetov et al. JOURNAL OF APPLIED PHYSICS
- Inhomogeneous electronic state near the insulator-to-metal transition in the correlated oxideVO2
- (2009) A. Frenzel et al. PHYSICAL REVIEW B
- Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry
- (2008) Changhyun Ko et al. APPLIED PHYSICS LETTERS
- Multiple Avalanches across the Metal-Insulator Transition of Vanadium Oxide Nanoscaled Junctions
- (2008) Amos Sharoni et al. PHYSICAL REVIEW LETTERS
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