Comment onReal-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte- Based ReRAM

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

(2012) Ilia Valov et al.   NATURE MATERIALS

A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture

(2012) Ming-Chi Wu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

(2011) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

One-dimensional model of the programming kinetics of conductive-bridge memory cells

(2011) John R. Jameson et al.   APPLIED PHYSICS LETTERS

Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Switching kinetics of a Cu2S-based gap-type atomic switch

(2011) Alpana Nayak et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

(2011) Takeo Ohno et al.   NATURE MATERIALS

Bulk and surface nucleation processes in Ag2S conductance switches

(2011) M. Morales-Masis et al.   PHYSICAL REVIEW B

Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch

(2010) Alpana Nayak et al.   Journal of Physical Chemistry Letters

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films

(2009) Sheng-Yu Wang et al.   APPLIED PHYSICS LETTERS

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Field-driven migration of bipolar metal particles on solid electrolytes

(2008) Klaus Peppler et al.   APPLIED PHYSICS LETTERS

On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

(2008) Weihua Guan et al.   APPLIED PHYSICS LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE