Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

Nanoionics Switching Devices: “Atomic Switches”

(2011) Tsuyoshi Hasegawa et al.   MRS BULLETIN

Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch

(2011) Tohru Tsuruoka et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Atomic switches: atomic-movement-controlled nanodevices for new types of computing

(2011) Takami Hino et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

The Effects of Moisture in Low-Voltage Organic Field-Effect Transistors Gated with a Hydrous Solid Electrolyte

(2010) Nikolai Kaihovirta et al.   ADVANCED FUNCTIONAL MATERIALS

A Polymer-Electrolyte-Based Atomic Switch

(2010) Shouming Wu et al.   ADVANCED FUNCTIONAL MATERIALS

Volatile/Nonvolatile Dual-Functional Atom Transistor

(2010) Tsuyoshi Hasegawa et al.   Applied Physics Express

Resistance switching of Cu/SiO2 memory cells studied under voltage and current-driven modes

(2010) Y. Bernard et al.   APPLIED PHYSICS LETTERS

Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

(2010) Yi Zhao et al.   APPLIED PHYSICS LETTERS

The Resistive Switching Mechanism of Ag/SrTiO[sub 3]/Pt Memory Cells

(2010) X. B. Yan et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Evaluation of the Adsorption States of H2O on Oxide Surfaces by Vibrational Absorption: Near- and Mid-Infrared Spectroscopy

(2010) Masato Takeuchi et al.   JOURNAL OF NEAR INFRARED SPECTROSCOPY

Forming and switching mechanisms of a cation-migration-based oxide resistive memory

(2010) T Tsuruoka et al.   NANOTECHNOLOGY

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion

(2009) Masamitsu Haemori et al.   Applied Physics Express

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Conductance switching in Ag2S devices fabricated byin situsulfurization

(2009) M Morales-Masis et al.   NANOTECHNOLOGY

Faradaic currents during electroforming of resistively switching Ag–Ge–Se type electrochemical metallization memory cells

(2009) Christina Schindler et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS

On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

(2008) Weihua Guan et al.   APPLIED PHYSICS LETTERS