Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
出版年份 2014 全文链接
标题
Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume 24, Issue 36, Pages 5679-5686
出版商
Wiley
发表日期
2014-07-16
DOI
10.1002/adfm.201401304
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- (2013) Chee Huei Lee et al. ADVANCED MATERIALS
- In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory
- (2013) Jun Sun et al. APPLIED PHYSICS LETTERS
- Formation process of conducting filament in planar organic resistive memory
- (2013) S. Gao et al. APPLIED PHYSICS LETTERS
- Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament
- (2013) Haitao Sun et al. IEEE ELECTRON DEVICE LETTERS
- Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures
- (2013) Xavier Saura et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Simulation of charge transport in multi-island tunneling devices: Application to disordered one-dimensional systems at low and high biases
- (2013) Madhusudan A. Savaikar et al. JOURNAL OF APPLIED PHYSICS
- Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
- (2013) Jui-Yuan Chen et al. NANO LETTERS
- Bipolar one diode–one resistor integration for high-density resistive memory applications
- (2013) Yingtao Li et al. Nanoscale
- Quantized Conductance and Switching in Percolating Nanoparticle Films
- (2013) Abdul Sattar et al. PHYSICAL REVIEW LETTERS
- 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory
- (2012) Gun Hwan Kim et al. ADVANCED FUNCTIONAL MATERIALS
- Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
- (2012) Qi Liu et al. ADVANCED MATERIALS
- Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory
- (2012) Xiaojian Zhu et al. ADVANCED MATERIALS
- Mechanism for resistive switching in an oxide-based electrochemical metallization memory
- (2012) Shanshan Peng et al. APPLIED PHYSICS LETTERS
- Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes
- (2012) Woon Ik Park et al. NANO LETTERS
- Tunable threshold resistive switching characteristics of Pt–Fe2O3core–shell nanoparticleassembly by space charge effect
- (2012) Yoon-Jae Baek et al. Nanoscale
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Emerging memories: resistive switching mechanisms and current status
- (2012) Doo Seok Jeong et al. REPORTS ON PROGRESS IN PHYSICS
- Observation of conducting filament growth in nanoscale resistive memories
- (2012) Yuchao Yang et al. Nature Communications
- Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation
- (2012) Hai Yang Peng et al. Scientific Reports
- Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory
- (2011) Seo Hyoung Chang et al. ADVANCED MATERIALS
- Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers
- (2011) Tsuyoshi Hasegawa et al. ADVANCED MATERIALS
- Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
- (2011) Feng Miao et al. ADVANCED MATERIALS
- Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
- (2011) Yong-En Syu et al. IEEE ELECTRON DEVICE LETTERS
- Co-Occurrence of Threshold Switching and Memory Switching in $\hbox{Pt}/\hbox{NbO}_{x}/\hbox{Pt}$ Cells for Crosspoint Memory Applications
- (2011) Xinjun Liu et al. IEEE ELECTRON DEVICE LETTERS
- Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires
- (2011) Li He et al. NANO LETTERS
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells
- (2010) Chang-Po Hsiung et al. ACS Nano
- Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor
- (2010) Zhi Xu et al. ACS Nano
- High switching endurance in TaOx memristive devices
- (2010) J. Joshua Yang et al. APPLIED PHYSICS LETTERS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions
- (2009) Qi Liu et al. IEEE ELECTRON DEVICE LETTERS
- The crossover from two dimensions to one dimension in granular electronic materials
- (2009) Ke Xu et al. Nature Nanotechnology
- Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film
- (2009) S. H. Chang et al. PHYSICAL REVIEW LETTERS
- Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors
- (2008) S. H. Chang et al. APPLIED PHYSICS LETTERS
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