期刊
ADVANCED FUNCTIONAL MATERIALS
卷 28, 期 13, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201706230
关键词
cathodic deposition; photo-multilevel current amplification; UV irradiation; zinc oxide rods
类别
资金
- Natural Science and Engineering Council of Canada (NSERC, Canada)
- Canada Research Chairs (CRC) Program
Zinc oxide (ZnO) devices represent an alternative in the semiconductor technology for their application in resistive switching memory devices and ultraviolet (UV) photodetectors due to their chemical and electrical properties. The multilevel current amplification of ZnO rods RRAM devices induced by UV light illumination is reported here for the first time. The resistive switching mechanism underlying in this type of devices is attributed to the formation of conductive filaments composed of oxygen vacancies. The analysis of the photodecay processes carried out on the devices fabricated with different electrodes shows that the type of interface (Ag/ZnO and Au/ZnO) affects the surface barrier height, which influences the photodecay rate. It is shown that by applying UV light, higher relaxation constants (slower photodecay rates) are obtained and lead to multilevel current amplification behavior.
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