标题
Observation of conducting filament growth in nanoscale resistive memories
作者
关键词
-
出版物
Nature Communications
Volume 3, Issue 1, Pages -
出版商
Springer Nature
发表日期
2012-03-13
DOI
10.1038/ncomms1737
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching
- (2011) Takashi Fujii et al. APPLIED PHYSICS LETTERS
- Electrochemical metallization memories—fundamentals, applications, prospects
- (2011) Ilia Valov et al. NANOTECHNOLOGY
- Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor
- (2010) Zhi Xu et al. ACS Nano
- Practical Approach to Programmable Analog Circuits With Memristors
- (2010) Yuriy V. Pershin et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- Nanoscale Memristor Device as Synapse in Neuromorphic Systems
- (2010) Sung Hyun Jo et al. NANO LETTERS
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- (2010) Julien Borghetti et al. NATURE
- Complementary resistive switches for passive nanocrossbar memories
- (2010) Eike Linn et al. NATURE MATERIALS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Experimental demonstration of associative memory with memristive neural networks
- (2010) Yuriy V. Pershin et al. NEURAL NETWORKS
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
- (2009) C. Schindler et al. APPLIED PHYSICS LETTERS
- Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Hybrid CMOS/Nanoelectronic Circuits: Opportunities and Challenges
- (2009) Konstantin K. Likharev Journal of Nanoelectronics and Optoelectronics
- Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
- (2009) Yu Chao Yang et al. NANO LETTERS
- Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
- (2009) Qiangfei Xia et al. NANO LETTERS
- Faradaic currents during electroforming of resistively switching Ag–Ge–Se type electrochemical metallization memory cells
- (2009) Christina Schindler et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory
- (2008) Sung Hyun Jo et al. NANO LETTERS
- Programmable Resistance Switching in Nanoscale Two-Terminal Devices
- (2008) Sung Hyun Jo et al. NANO LETTERS
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
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