The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

标题
The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2
作者
关键词
-
出版物
NANOTECHNOLOGY
Volume 29, Issue 33, Pages 335201
出版商
IOP Publishing
发表日期
2018-05-22
DOI
10.1088/1361-6528/aac6b3

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