Improvement of resistive switching performances via an amorphous ZrO2 layer formation in TiO2-based forming-free resistive random access memory

The enhancement of unipolar resistive switching behavior via an amorphous TiOx layer formation in Dy2O3-based forming-free RRAM

(2013) Hongbin Zhao et al.   SOLID-STATE ELECTRONICS

ZnO1–x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application

(2012) Chi-Hsin Huang et al.   ACS Nano

Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films

(2012) Myung Soo Lee et al.   APPLIED PHYSICS LETTERS

TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

(2011) Jungho Shin et al.   JOURNAL OF APPLIED PHYSICS

Top electrode-dependent resistance switching behaviors of ZnO thin films deposited on Pt/Ti/SiO2/Si substrate

(2011) Ming Hua Tang et al.   MICROELECTRONIC ENGINEERING

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Unipolar resistive switching and mechanism in Gd-doped-TiO2-based resistive switching memory devices

(2011) L F Liu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices

(2010) Kuyyadi P Biju et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

(2009) Qi Liu et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices

(2009) B. Sun et al.   JOURNAL OF APPLIED PHYSICS

Resistive Switching Memory Devices Composed of Binary Transition Metal Oxides Using Sol−Gel Chemistry

(2009) Chanwoo Lee et al.   LANGMUIR

Study on Resistance Switching Properties of Na0.5Bi0.5TiO3 Thin Films Using Impedance Spectroscopy

(2009) Ting Zhang et al.   Nanoscale Research Letters

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE