期刊
JOURNAL OF APPLIED PHYSICS
卷 121, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4980173
关键词
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资金
- National Natural Science Foundation of China [11274256]
- Program for Innovation Team Building at Institutions of Higher Education in Chongqing [CXTDX201601011]
A self-assembled three-dimensional (3-D) MoS2 microsphere-based memristor with a favorable ON/OFF resistance ratio of similar to 10(4), endurance, and retention time is demonstrated at room temperature. The formation and rupture of a localized Ag metallic filament, establishment and destruction of a boundary-based hopping path, and charge trapping and detrapping from the space charge region co-contribute to the bipolar resistive switching memory behaviours observed in the device of Ag/MoS2/ITO. This work may give insight into the mechanism of the resistive switching memory behaviours of a device with a 3-D micro-scale. Published by AIP Publishing.
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