Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories

Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM

(2012) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Quantum conductance and switching kinetics of AgI-based microcrossbar cells

(2012) S Tappertzhofen et al.   NANOTECHNOLOGY

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

(2012) Ilia Valov et al.   NATURE MATERIALS

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

(2011) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

Resistance switching memories are memristors

(2011) Leon Chua   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Spectromicroscopy of tantalum oxide memristors

(2011) John Paul Strachan et al.   APPLIED PHYSICS LETTERS

Redox processes in silicon dioxide thin films using copper microelectrodes

(2011) S. Tappertzhofen et al.   APPLIED PHYSICS LETTERS

Analysis of Transient Currents During Ultrafast Switching of $\hbox{TiO}_{2}$ Nanocrossbar Devices

(2011) C. Hermes et al.   IEEE ELECTRON DEVICE LETTERS

On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices

(2011) R. Soni et al.   JOURNAL OF APPLIED PHYSICS

Switching kinetics of a Cu2S-based gap-type atomic switch

(2011) Alpana Nayak et al.   NANOTECHNOLOGY

Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch

(2011) Tohru Tsuruoka et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

(2011) Takeo Ohno et al.   NATURE MATERIALS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Bulk and surface nucleation processes in Ag2S conductance switches

(2011) M. Morales-Masis et al.   PHYSICAL REVIEW B

Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch

(2010) Alpana Nayak et al.   Journal of Physical Chemistry Letters

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Crystal nucleation in glasses of phase change memory

(2008) V. G. Karpov et al.   JOURNAL OF APPLIED PHYSICS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE