Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
出版年份 2016 全文链接
标题
Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 109, Issue 14, Pages 143904
出版商
AIP Publishing
发表日期
2016-10-07
DOI
10.1063/1.4962655
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure
- (2016) Tsung-Ling Tsai et al. APPLIED PHYSICS LETTERS
- Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory
- (2016) Yao-Feng Chang et al. APPLIED PHYSICS LETTERS
- Impacts of Co doping on ZnO transparent switching memory device characteristics
- (2016) Firman Mangasa Simanjuntak et al. APPLIED PHYSICS LETTERS
- Current-voltage hysteresis of the composite MoS2-MoOx≤3 nanobelts for data storage
- (2016) Guangdong Zhou et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Resistance switching characteristics of core–shell γ-Fe 2 O 3 /Ni 2 O 3 nanoparticles in HfSiO matrix
- (2016) Guangdong Zhou et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces
- (2016) Chuan-Sen Yang et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix
- (2016) Guangdong Zhou et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2
- (2015) Youngjo Jin et al. ADVANCED MATERIALS
- Resistive Switching Memory Devices Based on Proteins
- (2015) Hong Wang et al. ADVANCED MATERIALS
- Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory
- (2015) Fei Zhou et al. APPLIED PHYSICS LETTERS
- Temperature dependence of conductance in NiO-based resistive switching memory showing two modes in the forming process
- (2015) Hiroki Sasakura et al. APPLIED PHYSICS LETTERS
- Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy
- (2015) K. E. Aretouli et al. APPLIED PHYSICS LETTERS
- Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices
- (2015) Guangdong Zhou et al. CURRENT APPLIED PHYSICS
- Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory
- (2015) Xing Long Shao et al. Nanoscale
- Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
- (2015) Vinod K. Sangwan et al. Nature Nanotechnology
- Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
- (2015) Anja Wedig et al. Nature Nanotechnology
- Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
- (2014) Chun-Yang Huang et al. APPLIED PHYSICS LETTERS
- The x dependent two kinds of resistive switching behaviors in SiOx films with different x component
- (2014) Yuefei Wang et al. APPLIED PHYSICS LETTERS
- Cause and Prevention of Moisture-Induced Degradation of Resistance Random Access Memory Nanodevices
- (2013) Xiang Yang et al. ACS Nano
- Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
- (2013) Simone Bertolazzi et al. ACS Nano
- Large Resistive Switching in Ferroelectric BiFeO3Nano-Island Based Switchable Diodes
- (2013) Sahwan Hong et al. ADVANCED MATERIALS
- Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory
- (2013) Yao-Feng Chang et al. APPLIED PHYSICS LETTERS
- A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
- (2012) Shimeng Yu et al. APPLIED PHYSICS LETTERS
- Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices
- (2011) Byungjin Cho et al. ADVANCED FUNCTIONAL MATERIALS
- Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model
- (2011) Shimeng Yu et al. APPLIED PHYSICS LETTERS
- Polar Charges Induced Electric Hysteresis of ZnO Nano/Microwire for Fast Data Storage
- (2011) Jinhui Song et al. NANO LETTERS
- Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications
- (2010) Li-Wei Feng et al. APPLIED PHYSICS LETTERS
- Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
- (2010) L. Goux et al. APPLIED PHYSICS LETTERS
- High switching endurance in TaOx memristive devices
- (2010) J. Joshua Yang et al. APPLIED PHYSICS LETTERS
- Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction
- (2010) Sungho Kim et al. APPLIED PHYSICS LETTERS
- Hysteresis-type current–voltage characteristics in Au/eumelanin/ITO/glass structure: Towards melanin based memory devices
- (2010) Marianna Ambrico et al. ORGANIC ELECTRONICS
- Bipolar resistive switching in individual Au–NiO–Au segmented nanowires
- (2009) Edward D. Herderick et al. APPLIED PHYSICS LETTERS
- Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films
- (2009) Sheng-Yu Wang et al. APPLIED PHYSICS LETTERS
- Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex
- (2009) Gang Liu et al. APPLIED PHYSICS LETTERS
- Reversible resistive switching behaviors in NiO nanowires
- (2008) Sung In Kim et al. APPLIED PHYSICS LETTERS
- On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt
- (2008) Weihua Guan et al. APPLIED PHYSICS LETTERS
- Effects of metal electrodes on the resistive memory switching property of NiO thin films
- (2008) C. B. Lee et al. APPLIED PHYSICS LETTERS
- Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted
- (2008) Qi Liu et al. APPLIED PHYSICS LETTERS
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
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