Article
Chemistry, Multidisciplinary
Rui Wang, Tuo Shi, Xumeng Zhang, Zuheng Wu, Qi Liu
Summary: In this work, a Ta/TaOx/Ru device is demonstrated to function as both a highly uniform and nonlinear selection device and a stable resistive switching device by controlling the voltage applied to the Ta electrode. The device shows high selectivity, current density, non-linear performance, and stable resistive switching behavior, potentially offering a solution for large-scale memristor arrays. Further research on the mechanism of Ta/TaOx devices is deepened with this study.
Article
Materials Science, Multidisciplinary
Hojeong Ryu, Sungjun Kim
Summary: This study investigates the threshold switching and short-term memory plasticity of a Pt/HfO2/TaOx/TiN resistive memory device for a neuromorphic system. The experimental results show that controlling the interval time of pulses can initiate the accumulation of conductance and a natural decrease in current, and a neuromorphic simulation was conducted to calculate pattern recognition accuracy, demonstrating the applicability of these mechanisms to temporal learning in a neuromorphic system.
Article
Chemistry, Physical
Juyeong Pyo, Sungjun Kim
Summary: The study fabricated the Ag/TaOx/TiN device and confirmed its structure with TEM and EDS, showing non-volatile bi-polar resistive switching and volatile threshold switching. By controlling different pulse streams, the study demonstrated temporal learning in volatile switching with short-term memory effect, outputting the letter P in the reservoir computing system.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Materials Science, Ceramics
Ziheng Ding, Jia Tang, Fangren Hu, Wei Zhang
Summary: In this study, Ta2O5 films were deposited on Si substrates by reactive magnetron sputtering under different process conditions, and the crystal characteristics of these films were controlled by the sputtering process. TaOx films with different oxygen content were deposited on ITO buffered Si substrates based on optimized process parameters and compared. The film with Ta/TaOx/ITO structure showed resistance switching behavior and its conduction mechanism was related to the oxygen partial pressure at the dielectric layer and electrode interface. This study provides insights into the design of TaOx-based resistive memory.
JOURNAL OF ASIAN CERAMIC SOCIETIES
(2023)
Article
Chemistry, Multidisciplinary
Minsu Park, Beomki Jeon, Jongmin Park, Sungjun Kim
Summary: This study introduces a memristor with a composite structure that can mimic the characteristics of a nociceptor, exhibiting stable performance and controllable threshold switching characteristics. This is of great importance for the development of artificial intelligence technology.
Article
Materials Science, Multidisciplinary
Hojeong Ryu, Beomjun Park, Sungjun Kim
Summary: This work demonstrates threshold switching and bipolar resistive switching in TiN/TaOx/ITO memristor device, showing different mechanisms for switching and resistive state modulation under positive and negative biases.
Article
Engineering, Electrical & Electronic
Zhenhua Wu, Yinxiao Feng, Yan Liu, Huilie Shi, Shuai Zhang, Zekun Liu, Zhiyu Hu
Summary: A bipolar resistive switching behavior was observed in the Ag/Sb2Te3/Pt heterojunction, with numerical simulation clarifying the electrical conduction mechanism and proposing a synergy model of the conductive filament and Schottky emission. This work enriches the material system of resistive random access memory and promotes a profound understanding of the physical mechanism behind RS behavior for further application in synaptic bionics.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Materials Science, Ceramics
Yibo Deng, Xiaoguang Xu, Zedong Xu, Mengxi Wang, Qi Liu, Yingli Ma, Jikun Chen, Kangkang Meng, Yong Wu, Jun Miao, Yong Jiang
Summary: In this work, the resistive switching behavior of an amorphous La2Ti2O7 film sandwiched between two Pt electrodes is reported. The resistive switching is forming-free and highly uniform. The mechanism of switching behavior is attributed to trapping/detrapping-mediated electronic bipolar resistance switching.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Multidisciplinary
Karthik Krishnan, Shaikh Mohammad Tauquir, Saranyan Vijayaraghavan, Ramesh Mohan
Summary: The resistive switching behavior in polymer-based devices is influenced by different conduction mechanisms, including the reliance on aluminum electrodes and electrochemically active silver elements for resistive behavior and rapid storage switching. X-ray photoelectron spectroscopy research has revealed the formation process of conducting filaments, providing deeper insights into understanding resistive behavior in polymer-based devices through rearranging device structures.
Article
Materials Science, Multidisciplinary
Hojeong Ryu, Hoeje Jung, Kisong Lee, Sungjun Kim
Summary: This study characterizes the resistive switching and neuromorphic simulation of a Pt/HfO2/TaN stack as an artificial synaptic device, demonstrating stable bipolar resistive switching operation and reliability through endurance and retention tests. The conduction mechanisms of low-resistance and high-resistance states were verified, and practical set and reset processes were performed using pulses. Neuromorphic applications such as potentiation and depression were also demonstrated, along with a neural network simulation for pattern recognition accuracy on the Fashion Modified National Institute of Standards and Technology dataset.
Article
Materials Science, Multidisciplinary
Juyeong Pyo, Seung-Jin Woo, Kisong Lee, Sungjun Kim
Summary: This work demonstrates the dual nature of threshold switching and non-volatile memory switching in Ag/SnOx/TiN memory devices, with the performance being influenced by different current values. Variations in resistance states at different CC values, as well as the application of pulse operation in volatile switching, set, reset, and negative-set behaviors, were observed during experiments.
Article
Nanoscience & Nanotechnology
Kota Sugawara, Hisashi Shima, Makoto Takahashi, Yasuhisa Naitoh, Hiroshi Suga, Hiroyuki Akinaga
Summary: Research and development of resistive switching memories, such as ReRAM and memristors, are actively promoted for new computing techniques. The study used low-frequency-noise spectroscopy to investigate traps in conduction paths of a TaOx-based ReRAM device, revealing multiple trap levels at different temperatures, showcasing the device's advantage in analog resistive switching applications.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Asif Ali, Haider Abbas, Muhammad Hussain, Syed Hassan Abbas Jaffery, Sajjad Hussain, Changhwan Choi, Jongwan Jung
Summary: This study investigates a GeS-based CBRAM device that exhibits both T-RS and B-RS characteristics under different CC conditions, proposing a model based on the formation and rupture of conductive filaments to explain their coexistence. Additionally, the retention characteristics of the device in both T-RS and B-RS mode, as well as its potential application in brain-inspired neuromorphic systems, are explored.
APPLIED MATERIALS TODAY
(2022)
Article
Nanoscience & Nanotechnology
Sandeep Munjal, Neeraj Khare
Summary: By adjusting the current compliance, the device exhibits volatile and nonvolatile resistive switching memories based on the type of conducting filament formed. The resistance states of the device depend on the current compliance set, with different characteristics observed for different levels of compliance.
Article
Engineering, Electrical & Electronic
Yasuhisa Naitoh, Hisashi Shima, Hiroyuki Akinaga
Summary: In this study, a planar nanogap-based Ta/TaOx/Pt ReRAM junction was fabricated to investigate local compositional changes during direct resistive switching. The results showed that the migration of tantalum atoms played an important role in resistive switching, as evidenced by the formation of pure tantalum pillars. Our nanoscale elemental analysis helped elucidate the mechanism of resistance changes in planar TaO x -ReRAMs through direct visualization of local compositional changes.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Physics, Applied
Xinna Yu, Ke Chang, Anhua Dong, Zhikai Gan, Kang'an Jiang, Yibin Ling, Yiru Niu, Diyuan Zheng, Xinyuan Dong, Renzhi Wang, Yizhen Li, Zhuyikang Zhao, Peng Bao, Binbin Liu, Yuhong Cao, Su Hu, Hui Wang
Summary: In this study, molybdenum disulfide quantum dots were used to enhance the performance of resistive switching devices, resulting in lower switching voltages, uniform resistance states, improved endurance, and larger on/off ratios. The convergence of electric field distribution around the quantum dots is believed to enhance conductive filament formation, contributing to the optimization of device performance and furthering developments in data storage applications.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Xinyuan Dong, Diyuan Zheng, Jing Lu, Yiru Niu, Binbin Liu, Hui Wang
Summary: By utilizing surface plasmon-based techniques, researchers have successfully prepared Ag-ZnO core-shell nanoparticles with enhanced lateral photovoltaic effect. This system exhibits excellent LPE performance with a maximum sensitivity of 122.1 mV/mm, significantly outperforming conventional Ag/Si (5.03 mV/mm) and ZnO/Si (76.13 mV/mm) systems.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Yuhong Cao, Zhuyikang Zhao, Peng Bao, Zhikai Gan, Hui Wang
Summary: The transient composite structure of silk protein combined with silver nanoparticles exhibits excellent photovoltaic properties and potential biocompatibility, suggesting a promising alternative for the future development of biomaterial-related transient photovoltaic devices.
PHYSICAL REVIEW APPLIED
(2021)
Article
Physics, Applied
Shuai Liu, Xinyuan Dong, Yiru Niu, Diyuan Zheng, Zhikai Gan, Hui Wang
Summary: This study reveals an enhanced light-induced resistance effect in the structure of Ag/graphene/n-type Si, demonstrating significant linear resistance change and high sensitivity. By optimizing the thickness of the Ag film, the resistance change ratio can reach 472%, much higher than the control sample. The diffusion and recombination of photocarriers at the heterojunction interface play a crucial role in the enhancement of the effect.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Ke Chang, Xinna Yu, Binbin Liu, Yiru Niu, Renzhi Wang, Peng Bao, Gaoqi Hu, Hui Wang
Summary: The use of MoS2 quantum dots to modify inert electrodes can significantly reduce randomness in transient memristors, improving cycling endurance. Additionally, a percolation model of conductive filaments was proposed to reveal the relationship between electrode morphology and switching characteristics.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Yiru Niu, Kang'an Jiang, Xinyuan Dong, Diyuan Zheng, Binbin Liu, Hui Wang
Summary: In this study, iron oxide-based resistive random access memory (RRAM) with a simple structure demonstrated ultra-low set and reset voltage, high resistance ratio, excellent cycling endurance, and retention time. Major parameters showed about an order of magnitude improvement compared to previous data, indicating outstanding stable low power consumption quality. These findings suggest significant potential for the application of Fe2O3 memristor and provide a new idea for high-performance low-power RRAM realization.
Article
Optics
Shuai Liu, Anhua Dong, Xinyuan Dong, Yiru Niu, Diyuan Zheng, Hui Wang
Summary: Complex oxide perovskites, with SrTiO3 as an iconic material, exhibit novel physical phenomena and have gained popularity in electronic devices. The enhancement of lateral photovoltaic effect sensitivity by SrTiO3 nano-film offers an effective way to improve oxide-based photodetection devices.
Article
Physics, Applied
Yiru Niu, Xinna Yu, Xinyuan Dong, Diyuan Zheng, Shuai Liu, Zhikai Gan, Ke Chang, Binbin Liu, Kang'an Jiang, Yizhen Li, Hui Wang
Summary: By controlling the formation and fracture of conductive filaments at the interface, adding a SiO2/MoS2 QD hybrid structure can transform the reset mode of RRAM from progressive to abrupt, significantly improving the switching window and performance.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Diyuan Zheng, Xinyuan Dong, Jing Lu, Yiru Niu, Hui Wang
Summary: WS2, a typical TMDs with strong light-matter interaction, shows great potential for highly-responsive photoelectric detectors. The WS2 nano-films prepared by ALD exhibit a high-performance lateral photovoltaic effect with high position sensitivity and ultrafast response speed, while the absorption wavelength of lateral photovoltage changes significantly as the thickness of WS2 decreases, indicating a correlation between materials bandgap and LPV.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Diyuan Zheng, Xinyuan Dong, Jing Lu, Yiru Niu, Hui Wang
Summary: By using P(VDF-CTFE) as a ferroelectric gate, the sensitivity and infrared detection performance of WS2/Si junctions have been successfully improved, allowing for broadening of the absorption wavelength range and enhancing the sensitivity of lateral photovoltaic effect. The significant improvement in response speed is attributed to the increase in carrier initial kinetic energy, providing a new approach for high-sensitivity, ultrafast, and stable infrared photodetection.
Article
Nanoscience & Nanotechnology
Ke Chang, Anhua Dong, Xinna Yu, Binbin Liu, Xinhui Zhao, Renzhi Wang, Zhikai Gan, Kang'an Jiang, Yiru Niu, Xinyuan Dong, Diyuan Zheng, Yizhen Li, Peng Bao, Zhuyikang Zhao, Hui Wang
Summary: By utilizing Ag-doped fibroin film as a switching medium, a high-performance transient memristor with self-assembled Ag nanoclusters model is designed and fabricated, showing novel electron-transport properties. The device can operate at ultralow voltages and has an extremely high memory window, opening up a new pathway for designing high-performance transient memristors for a safe and reliable data storage system.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Physics, Applied
Yizhen Li, Xinhui Zhao, Ke Chang, Yiru Niu, Xinna Yu, Hui Wang
Summary: This study improved the resistive switching behavior of a memory device by adding MoS2 quantum dots between the W bottom electrode and ZnO insulator. The modified device showed better switching properties and was successfully transferred onto a polyvinyl alcohol substrate, making it fully degradable.
PHYSICAL REVIEW APPLIED
(2022)
Article
Optics
Yuhong Cao, Kang'an Jiang, Zhuyikang Zhao, Hui Wang
Summary: Optoelectronic memory is a promising strategy for emulating the human visual system, but current devices lack the ability to store visual information. In this study, we discovered a light-induced trapping effect that allows for long-term storage of optical signals in a molybdenum disulfide quantum dot memory structure. The trapping capability can be significantly enhanced through laser irradiation, showcasing the potential of this approach for artificial intelligence devices.
Article
Physics, Applied
Renzhi Wang, Ke Chang, Xinhui Zhao, Xinna Yu, Saiqun Ma, Zhuyikang Zhao, Hui Wang
Summary: This study investigates the impact of device kinetic parameters on the stability of resistive switching behavior and proposes a high-performance RRAM with a Pt-Ag/Ta2O5/GQDs/Pt structure. Quantum dots can regulate the direction of Ag ion migration, while the Pt-Ag composite electrode can manipulate the oxidation rate of Ag atoms. Compared to the Ag/Ta2O5/GQDs/Pt device, the Pt-Ag/Ta2O5/GQDs/Pt device exhibits significantly improved performance.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Ke Chang, Xinhui Zhao, Xinna Yu, Zhikai Gan, Renzhi Wang, Anhua Dong, Zhuyikang Zhao, Yafei Zhang, Hui Wang
Summary: In this work, a light-triggered nonvolatile resistive switching behavior in oxygen-doped MoS2 is demonstrated. The two-terminal devices exhibit stable light-modulated resistive switching characteristics and optically tunable synaptic properties with an on/off ratio of up to 104. The integrated device with crossbar architecture enables simultaneous image sensing, preprocessing, and storage, thereby increasing the training efficiency and recognition rate of image recognition tasks. This work presents a novel pathway to develop the next generation of light-controlled memory and artificial vision systems for neuromorphic computing.