Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiO x Modulated by Moisture
出版年份 2018 全文链接
标题
Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiO
x
Modulated by Moisture
作者
关键词
-
出版物
Advanced Electronic Materials
Volume 4, Issue 4, Pages 1700567
出版商
Wiley
发表日期
2018-01-12
DOI
10.1002/aelm.201700567
参考文献
相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。- Evolution of resistive switching mechanism through H 2 O 2 sensing by using TaO x -based material in W/Al 2 O 3 /TaO x /TiN structure
- (2018) Somsubhra Chakrabarti et al. APPLIED SURFACE SCIENCE
- Mechanism for an enhanced resistive switching effect of bilayer NiO x /TiO 2 for resistive random access memory
- (2017) Guangdong Zhou et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Mechanism for bipolar resistive switching memory behaviors of a self-assembled three-dimensional MoS2 microsphere composed active layer
- (2017) G. D. Zhou et al. JOURNAL OF APPLIED PHYSICS
- Hydrogen-peroxide-modified egg albumen for transparent and flexible resistive switching memory
- (2017) Guangdong Zhou et al. NANOTECHNOLOGY
- Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing
- (2017) Suhas Kumar et al. NATURE
- An organic nonvolatile resistive switching memory device fabricated with natural pectin from fruit peel
- (2017) Bai Sun et al. ORGANIC ELECTRONICS
- Four-Bits-Per-Cell Operation in an HfO2 -Based Resistive Switching Device
- (2017) Gun Hwan Kim et al. Small
- Investigation of the Impact of High Temperatures on the Switching Kinetics of Redox-Based Resistive Switching Cells using a High-Speed Nanoheater
- (2017) Moritz von Witzleben et al. Advanced Electronic Materials
- Graphene and Related Materials for Resistive Random Access Memories
- (2017) Fei Hui et al. Advanced Electronic Materials
- Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy
- (2016) Marco Moors et al. ACS Nano
- Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
- (2016) Guangdong Zhou et al. APPLIED PHYSICS LETTERS
- A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory
- (2016) Xing Long Shao et al. Nanoscale
- Coexistence of resistance switching and negative differential resistance in the α-Fe2O3 nanorod film
- (2016) Yunyu Cai et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix
- (2016) Guangdong Zhou et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Defining Switching Efficiency of Multilevel Resistive Memory with PdO as an Example
- (2016) K. D. M. Rao et al. Advanced Electronic Materials
- Indium-Free Inverted Organic Solar Cells Using Niobium-Doped Titanium Oxide with Integrated Dual Function of Transparent Electrode and Electron Transport Layer
- (2016) Il Jeon et al. Advanced Electronic Materials
- How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?
- (2015) Felix Messerschmitt et al. ADVANCED FUNCTIONAL MATERIALS
- Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
- (2015) Jung Ho Yoon et al. ADVANCED MATERIALS
- Forming compliance dominated memristive switching through interfacial reaction in Ti/TiO2/Au structure
- (2015) Zhensen Tang et al. JOURNAL OF APPLIED PHYSICS
- Prospective of Semiconductor Memory Devices: from Memory System to Materials
- (2015) Cheol Seong Hwang Advanced Electronic Materials
- Realization of Optimal Interconnector for Tandem Organic Light-Emitting Diodes with Record Efficiency
- (2015) Hengda Sun et al. Advanced Electronic Materials
- An Optoelectronic Switch Based on Intrinsic Dual Schottky Diodes in Ambipolar MoSe2Field-Effect Transistors
- (2015) Nihar R. Pradhan et al. Advanced Electronic Materials
- In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories
- (2015) Yuanyuan Shi et al. Advanced Electronic Materials
- Organic Biomimicking Memristor for Information Storage and Processing Applications
- (2015) Gang Liu et al. Advanced Electronic Materials
- Novel Ferroelectric Polymer Memory Coupling Two Identical Thin-Film Transistors
- (2015) Ji Hoon Park et al. Advanced Electronic Materials
- Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device
- (2014) Haitao Sun et al. JOURNAL OF APPLIED PHYSICS
- Current-induced electrical self-oscillations across out-of-plane threshold switches based on VO2 layers integrated in crossbars geometry
- (2014) A. Beaumont et al. JOURNAL OF APPLIED PHYSICS
- Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories
- (2013) Stefan Tappertzhofen et al. ACS Nano
- Utilizing NDR effect to reduce switching threshold variations in memristive devices
- (2013) Fabien Alibart et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Nanobatteries in redox-based resistive switches require extension of memristor theory
- (2013) I. Valov et al. Nature Communications
- Resonant tunnelling and negative differential conductance in graphene transistors
- (2013) L. Britnell et al. Nature Communications
- Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device
- (2012) Yuanmin Du et al. ACS Nano
- Three-Terminal Graphene Negative Differential Resistance Devices
- (2012) Yanqing Wu et al. ACS Nano
- Electrically driven metal-insulator switching in δ-KxV2O5 nanowires
- (2012) Tai-Lung Wu et al. APPLIED PHYSICS LETTERS
- Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell
- (2012) Shin Buhm Lee et al. CURRENT APPLIED PHYSICS
- Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System
- (2011) Matthew D. Pickett et al. ADVANCED MATERIALS
- Chemically Driven Nanoscopic Magnetic Phase Separation at the SrTiO3(001)/La1-xSrxCoO3 Interface
- (2011) Maria A. Torija et al. ADVANCED MATERIALS
- Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires
- (2011) Li He et al. NANO LETTERS
- Negative differential resistance and resistive switching behaviors in Cu2S nanowire devices
- (2010) Xiaohua Liu et al. APPLIED PHYSICS LETTERS
- Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature
- (2010) Safumi Suzuki et al. APPLIED PHYSICS LETTERS
- Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films
- (2010) Seunghyup Lee et al. JOURNAL OF APPLIED PHYSICS
- Electronic correlation effects in reduced rutileTiO2within theLDA+Umethod
- (2010) Seong-Geon Park et al. PHYSICAL REVIEW B
- How Is Oxygen Incorporated into Oxides? A Comprehensive Kinetic Study of a Simple Solid-State Reaction with SrTiO3as a Model Material
- (2008) Rotraut Merkle et al. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
- Origin of Negative Differential Resistance Observed on Bipolar Resistance Switching Device with Ti/Pr0.7Ca0.3MnO3/Pt Structure
- (2008) Keiji Shono et al. Applied Physics Express
- Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
- (2008) Doo Seok Jeong et al. JOURNAL OF APPLIED PHYSICS
- One-Dimensional Iron−Cyclopentadienyl Sandwich Molecular Wire with Half Metallic, Negative Differential Resistance and High-Spin Filter Efficiency Properties
- (2008) Liping Zhou et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started