Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

标题
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 12, Pages 4309-4317
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2011-10-12
DOI
10.1109/ted.2011.2167513

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