Electrode dependence of filament formation in HfO2 resistive-switching memory

Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion

(2009) Masamitsu Haemori et al.   Applied Physics Express

Hysteretic bipolar resistive switching characteristics in TiO2/TiO2−x multilayer homojunctions

(2009) Young Ho Do et al.   APPLIED PHYSICS LETTERS

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of the top electrode material on the resistive switching of TiO2 thin film

(2009) Wan-Gee Kim et al.   MICROELECTRONIC ENGINEERING

Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

(2008) Heng Yuan Lee et al.   APPLIED PHYSICS LETTERS

On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

(2008) Weihua Guan et al.   APPLIED PHYSICS LETTERS

Effects of metal electrodes on the resistive memory switching property of NiO thin films

(2008) C. B. Lee et al.   APPLIED PHYSICS LETTERS

Scaling behaviors of reset voltages and currents in unipolar resistance switching

(2008) S. B. Lee et al.   APPLIED PHYSICS LETTERS