期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 2, 页码 220-222出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2229457
关键词
Correlated electrons; memory; metal-insulator transition (MIT); ultrafast switch; vanadium dioxide
资金
- Air Force Office of Scientific Research [FA9550-08-1-0203]
- Office of Naval Research [N00014-10-1-0131]
Electrically driven metal-insulator transition (MIT) in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high-speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal structures and reproducible high-speed switching measurements in these two-terminal devices. We have observed a clear correlation between the electrically driven ON/OFF current ratio and the thermally induced resistance change during MIT. It is also found that sharp MIT could be triggered by the external voltage pulses within 2 ns at room temperature and the achieved ON/OFF ratio is greater than two orders of magnitude with good endurance.
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