Characteristics of hafnium oxide resistance random access memory with different setting compliance current
出版年份 2013 全文链接
标题
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 103, Issue 16, Pages 163502
出版商
AIP Publishing
发表日期
2013-10-16
DOI
10.1063/1.4825104
参考文献
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- (2013) Kuan-Chang Chang et al. APPLIED PHYSICS LETTERS
- Atomic-level quantized reaction of HfOx memristor
- (2013) Yong-En Syu et al. APPLIED PHYSICS LETTERS
- Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices
- (2013) Kuan-Chang Chang et al. IEEE ELECTRON DEVICE LETTERS
- Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment
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- Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
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- Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
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- Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
- (2013) Tian-Jian Chu et al. IEEE ELECTRON DEVICE LETTERS
- In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy
- (2012) Thomas Bertaud et al. APPLIED PHYSICS LETTERS
- Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
- (2012) Tsung-Ming Tsai et al. APPLIED PHYSICS LETTERS
- Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
- (2012) Tsung-Ming Tsai et al. IEEE ELECTRON DEVICE LETTERS
- Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment
- (2012) Tsung-Ming Tsai et al. IEEE ELECTRON DEVICE LETTERS
- Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
- (2011) Kuan-Chang Chang et al. APPLIED PHYSICS LETTERS
- The Effect of Silicon Oxide Based RRAM with Tin Doping
- (2011) Kuan-Chang Chang et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
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- Developments in nanocrystal memory
- (2011) Ting-Chang Chang et al. Materials Today
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid
- (2009) Min-Chen Chen et al. APPLIED PHYSICS LETTERS
- Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions
- (2009) Qi Liu et al. IEEE ELECTRON DEVICE LETTERS
- Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications
- (2009) Yingtao Li et al. IEEE ELECTRON DEVICE LETTERS
- Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications
- (2009) Yan Wang et al. NANOTECHNOLOGY
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