Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress

Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

(2011) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors

(2011) Wan-Fang Chung et al.   APPLIED PHYSICS LETTERS

Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation

(2011) Sheng-Yao Huang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Effect of N2O plasma treatment on the improvement of instability under light illumination for InGaZnO thin-film transistors

(2011) Tien-Yu Hsieh et al.   THIN SOLID FILMS

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

(2011) Geng-Wei Chang et al.   THIN SOLID FILMS

Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

(2010) Yu-Chun Chen et al.   APPLIED PHYSICS LETTERS

Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

(2010) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

(2010) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

4.0-inch Active-Matrix Organic Light-Emitting Diode Display Integrated with Driver Circuits Using Amorphous In–Ga–Zn-Oxide Thin-Film Transistors with Suppressed Variation

(2010) Hiroki Ohara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4Thin-Film Transistors

(2009) Kazushige Takechi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

(2008) Jaechul Park et al.   APPLIED PHYSICS LETTERS