Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation

Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

(2010) Shinhyuk Yang et al.   APPLIED PHYSICS LETTERS

Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

(2010) Sang-Yun Sung et al.   APPLIED PHYSICS LETTERS

High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

(2010) Shinhyuk Yang et al.   IEEE ELECTRON DEVICE LETTERS

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

(2008) Jaechul Park et al.   APPLIED PHYSICS LETTERS

Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

(2008) Jin-Seong Park et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

Stress-Induced Hump Effects of p-Channel Polycrystalline Silicon Thin-Film Transistors

(2008) Ching-Fang Huang et al.   IEEE ELECTRON DEVICE LETTERS

Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

(2008) Jang Yeon Kwon et al.   IEEE ELECTRON DEVICE LETTERS