Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

(2009)   APPLIED PHYSICS LETTERS

Multilevel resistive switching with ionic and metallic filaments

(2009) Ming Liu et al.   APPLIED PHYSICS LETTERS

Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells

(2009) Ludovic Goux et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Direct observation of oxygen movement during resistance switching in NiO/Pt film

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS

Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices

(2008) Kohei Fujiwara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application

(2008) Qi Liu et al.   JOURNAL OF APPLIED PHYSICS

Al electrode dependent transition to bipolar resistive switching characteristics in pure TiO2 films

(2008) Young Ho Do et al.   JOURNAL OF APPLIED PHYSICS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE