Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement

Improved NBTI reliability with sub-1-nanometer EOT ZrO2 gate dielectric compared with HfO2

(2013) Moonju Cho et al.   IEEE ELECTRON DEVICE LETTERS

Statistical Characterization and Modeling of the Temporal Evolutions of $\Delta V_{\rm t}$ Distribution in NBTI Recovery in Nanometer MOSFETs

(2013) Jung-Piao Chiu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors

(2012) Szu-Han Ho et al.   APPLIED PHYSICS LETTERS

Evidence for a Very Small Tunneling Effective Mass (0.03 $m_{0}$) in MOSFET High-$k$ (HfSiON) Gate Dielectrics

(2012) Ming-Jer Chen et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation

(2012) Wen-hung Lo et al.   IEEE ELECTRON DEVICE LETTERS

Role of ${\hbox{HfO}} _{2} $/${\hbox{SiO}}_{2}$ Gate Dielectric on the Reduction of Low-Frequent Noise and the Enhancement of a-IGZO TFT Electrical Performance

(2012) Liang-Yu Su et al.   Journal of Display Technology

Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

(2011) Chih-Hao Dai et al.   APPLIED PHYSICS LETTERS

Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

(2011) Chih-Hao Dai et al.   APPLIED PHYSICS LETTERS

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

(2011) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs

(2011) Chih-Hao Dai et al.   IEEE ELECTRON DEVICE LETTERS

A Method of Extracting Metal-Gate High-$k$ Material Parameters Featuring Electron Gate Tunneling Current Transition

(2011) Chih-Yu Hsu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

(2011) Hyung-Suk Jung et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Developments in nanocrystal memory

(2011) Ting-Chang Chang et al.   Materials Today

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

(2010) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

(2010) Chih-Tsung Tsai et al.   APPLIED PHYSICS LETTERS

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(2010) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

High-Performance a-IGZO Thin-Film Transistor Using $ \hbox{Ta}_{2}\hbox{O}_{5}$ Gate Dielectric

(2010) C. J. Chiu et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature

(2010) Jae Sang Lee et al.   IEEE ELECTRON DEVICE LETTERS

Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain

(2010) Chih-Hao Dai et al.   SURFACE & COATINGS TECHNOLOGY

Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress

(2008) Y.J. Kuo et al.   THIN SOLID FILMS