Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

出版年份 2013 全文链接

标题

作者

关键词

出版物

Volume 34, Issue 5, Pages 617-619

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2013-04-04

DOI

10.1109/led.2013.2251995

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