Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide

标题
Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide
作者
关键词
-
出版物
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 14, Issue 12, Pages H475
出版商
The Electrochemical Society
发表日期
2011-11-05
DOI
10.1149/2.007112esl

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