Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment
出版年份 2013 全文链接
标题
Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment
作者
关键词
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出版物
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 20, Pages 204501
出版商
AIP Publishing
发表日期
2013-11-23
DOI
10.1063/1.4832327
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