Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device

标题
Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 7, Pages 864-866
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-05-24
DOI
10.1109/led.2013.2260125

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