High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors
出版年份 2013 全文链接
标题
High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 103, Issue 1, Pages 012101
出版商
AIP Publishing
发表日期
2013-07-03
DOI
10.1063/1.4813090
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors
- (2012) Sheng-Yao Huang et al. APPLIED PHYSICS LETTERS
- Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors
- (2012) Tien-Yu Hsieh et al. IEEE ELECTRON DEVICE LETTERS
- Investigating Degradation Behaviors Induced by DC and AC Bias-Stress under Light Illumination in InGaZnO Thin-Film Transistors
- (2012) Tien-Yu Hsieh et al. ECS Journal of Solid State Science and Technology
- Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors
- (2011) Wan-Fang Chung et al. APPLIED PHYSICS LETTERS
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- (2011) Yong-En Syu et al. IEEE ELECTRON DEVICE LETTERS
- Developments in nanocrystal memory
- (2011) Ting-Chang Chang et al. Materials Today
- Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
- (2010) Yu-Chun Chen et al. APPLIED PHYSICS LETTERS
- Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
- (2010) Te-Chih Chen et al. APPLIED PHYSICS LETTERS
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- Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors
- (2010) S.W. Tsao et al. SOLID-STATE ELECTRONICS
- Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors
- (2009) Sunho Jeong et al. ADVANCED MATERIALS
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- (2008) Wei-Ren Chen et al. APPLIED PHYSICS LETTERS
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- (2008) Jeong-Min Lee et al. APPLIED PHYSICS LETTERS
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