High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors

标题
High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 103, Issue 1, Pages 012101
出版商
AIP Publishing
发表日期
2013-07-03
DOI
10.1063/1.4813090

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