Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

标题
Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 12, Pages 124505
出版商
AIP Publishing
发表日期
2013-09-26
DOI
10.1063/1.4822158

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