Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

标题
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 2, Pages 217-219
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-02-01
DOI
10.1109/led.2013.2295378

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