Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors

标题
Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 104, Issue 10, Pages 103501
出版商
AIP Publishing
发表日期
2014-03-11
DOI
10.1063/1.4863682

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