Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors
出版年份 2014 全文链接
标题
Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 104, Issue 10, Pages 103501
出版商
AIP Publishing
发表日期
2014-03-11
DOI
10.1063/1.4863682
参考文献
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- Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT
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- (2008) A. Suresh et al. APPLIED PHYSICS LETTERS
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