Uniformity Improvement in 1T1R RRAM With Gate Voltage Ramp Programming

标题
Uniformity Improvement in 1T1R RRAM With Gate Voltage Ramp Programming
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 12, Pages 1224-1226
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-10-28
DOI
10.1109/led.2014.2364171

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