Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors
出版年份 2014 全文链接
标题
Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 116, Issue 15, Pages 154508
出版商
AIP Publishing
发表日期
2014-10-22
DOI
10.1063/1.4897236
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
- (2014) Tian-Jian Chu et al. IEEE ELECTRON DEVICE LETTERS
- Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory
- (2014) Kuan-Chang Chang et al. IEEE ELECTRON DEVICE LETTERS
- Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory
- (2014) IEEE ELECTRON DEVICE LETTERS
- Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
- (2014) IEEE ELECTRON DEVICE LETTERS
- Performance and characteristics of double layer porous silicon oxide resistance random access memory
- (2013) Tsung-Ming Tsai et al. APPLIED PHYSICS LETTERS
- Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
- (2013) Kuan-Chang Chang et al. APPLIED PHYSICS LETTERS
- Characteristics of hafnium oxide resistance random access memory with different setting compliance current
- (2013) Yu-Ting Su et al. APPLIED PHYSICS LETTERS
- Atomic-level quantized reaction of HfOx memristor
- (2013) Yong-En Syu et al. APPLIED PHYSICS LETTERS
- Pi-gate tunneling field-effect transistor charge trapping nonvolatile memory based on all tunneling transportation
- (2013) Yi-Ruei Jhan et al. APPLIED PHYSICS LETTERS
- Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices
- (2013) Kuan-Chang Chang et al. IEEE ELECTRON DEVICE LETTERS
- Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment
- (2013) Kuan-Chang Chang et al. IEEE ELECTRON DEVICE LETTERS
- Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
- (2013) Kuan-Chang Chang et al. IEEE ELECTRON DEVICE LETTERS
- Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device
- (2013) Yong-En Syu et al. IEEE ELECTRON DEVICE LETTERS
- Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
- (2013) Kuan-Chang Chang et al. IEEE ELECTRON DEVICE LETTERS
- Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
- (2013) Tian-Jian Chu et al. IEEE ELECTRON DEVICE LETTERS
- Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2structure resistance random access memory
- (2013) Rui Zhang et al. JOURNAL OF APPLIED PHYSICS
- Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
- (2013) Kuan-Chang Chang et al. JOURNAL OF SUPERCRITICAL FLUIDS
- Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
- (2013) Kuan-Chang Chang et al. Nanoscale Research Letters
- Self-heating enhanced charge trapping effect for InGaZnO thin film transistor
- (2012) Te-Chih Chen et al. APPLIED PHYSICS LETTERS
- Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
- (2012) Tsung-Ming Tsai et al. APPLIED PHYSICS LETTERS
- Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor
- (2012) Li-Feng Teng et al. APPLIED PHYSICS LETTERS
- Silicon introduced effect on resistive switching characteristics of WOX thin films
- (2012) Yong-En Syu et al. APPLIED PHYSICS LETTERS
- Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
- (2012) Tsung-Ming Tsai et al. IEEE ELECTRON DEVICE LETTERS
- Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation
- (2012) Wen-hung Lo et al. IEEE ELECTRON DEVICE LETTERS
- Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment
- (2012) Tsung-Ming Tsai et al. IEEE ELECTRON DEVICE LETTERS
- Twin Thin-Film Transistor Nonvolatile Memory With an Indium–Gallium–Zinc–Oxide Floating Gate
- (2012) Min-Feng Hung et al. IEEE ELECTRON DEVICE LETTERS
- Self-Heating-Effect-Induced Degradation Behaviors in a-InGaZnO Thin-Film Transistors
- (2012) Tien-Yu Hsieh et al. IEEE ELECTRON DEVICE LETTERS
- Systematic Investigations on Self-Heating-Effect-Induced Degradation Behavior in a-InGaZnO Thin-Film Transistors
- (2012) Tien-Yu Hsieh et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Drastic improvement of oxide thermoelectric performance using thermal and plasma treatments of the InGaZnO thin films grown by sputtering
- (2011) Dong Kyu Seo et al. ACTA MATERIALIA
- Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
- (2011) Kuan-Chang Chang et al. APPLIED PHYSICS LETTERS
- High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory
- (2011) Min-Feng Hung et al. APPLIED PHYSICS LETTERS
- Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
- (2011) Te-Chih Chen et al. APPLIED PHYSICS LETTERS
- Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment
- (2011) Kuan-Chang Chang et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- The Effect of Silicon Oxide Based RRAM with Tin Doping
- (2011) Kuan-Chang Chang et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
- (2011) Yong-En Syu et al. IEEE ELECTRON DEVICE LETTERS
- Developments in nanocrystal memory
- (2011) Ting-Chang Chang et al. Materials Today
- Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT
- (2011) Chur-Shyang Fuh et al. THIN SOLID FILMS
- Atomic-level control of the thermoelectric properties in polytypoid nanowires
- (2011) Sean C. Andrews et al. Chemical Science
- Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
- (2010) Te-Chih Chen et al. APPLIED PHYSICS LETTERS
- Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor
- (2010) Chih-Tsung Tsai et al. APPLIED PHYSICS LETTERS
- Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
- (2010) Min-Chen Chen et al. APPLIED PHYSICS LETTERS
- Influence of H[sub 2]O Dipole on Subthreshold Swing of Amorphous Indium–Gallium–Zinc-Oxide Thin Film Transistors
- (2010) Wan-Fang Chung et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium–Gallium–Zinc–Oxide Charge-Trapping Layer
- (2010) Lun-Chun Chen et al. IEEE ELECTRON DEVICE LETTERS
- On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs
- (2010) Chih-Hao Dai et al. IEEE ELECTRON DEVICE LETTERS
- Gate-bias stress in amorphous oxide semiconductors thin-film transistors
- (2009) M. E. Lopes et al. APPLIED PHYSICS LETTERS
- Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress
- (2009) Po-Tsun Liu et al. APPLIED PHYSICS LETTERS
- Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
- (2008) Jin-Seong Park et al. APPLIED PHYSICS LETTERS
- Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
- (2008) A. Suresh et al. APPLIED PHYSICS LETTERS
- Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
- (2008) Jeong-Min Lee et al. APPLIED PHYSICS LETTERS
- Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted
- (2008) Qi Liu et al. APPLIED PHYSICS LETTERS
- Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors
- (2008) Mami Fujii et al. JAPANESE JOURNAL OF APPLIED PHYSICS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreDiscover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversation