Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

(2014) Yi-Jiun Chen et al.   IEEE ELECTRON DEVICE LETTERS

Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

(2014) Tian-Jian Chu et al.   IEEE ELECTRON DEVICE LETTERS

Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

(2014) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

(2014)   IEEE ELECTRON DEVICE LETTERS

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

(2014)   IEEE ELECTRON DEVICE LETTERS

Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

(2014) Chi-Chou Lin et al.   JOURNAL OF APPLIED PHYSICS

Performance and characteristics of double layer porous silicon oxide resistance random access memory

(2013) Tsung-Ming Tsai et al.   APPLIED PHYSICS LETTERS

Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process

(2013) Kuan-Chang Chang et al.   APPLIED PHYSICS LETTERS

Characteristics of hafnium oxide resistance random access memory with different setting compliance current

(2013) Yu-Ting Su et al.   APPLIED PHYSICS LETTERS

Quantum-size effects in hafnium-oxide resistive switching

(2013) Shibing Long et al.   APPLIED PHYSICS LETTERS

Multilevel resistive switching memory with amorphous InGaZnO-based thin film

(2013) Ching-Hui Hsu et al.   APPLIED PHYSICS LETTERS

Atomic-level quantized reaction of HfOx memristor

(2013) Yong-En Syu et al.   APPLIED PHYSICS LETTERS

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Self-Rectifying Resistive-Switching Device With $ \hbox{a-Si/WO}_{3}$ Bilayer

(2013) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament

(2013) Haitao Sun et al.   IEEE ELECTRON DEVICE LETTERS

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device

(2013) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

(2013) Tian-Jian Chu et al.   IEEE ELECTRON DEVICE LETTERS

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

(2013) Shibing Long et al.   Scientific Reports

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

(2013) Rui Zhang et al.   Nanoscale Research Letters

ZnO1–x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application

(2012) Chi-Hsin Huang et al.   ACS Nano

Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

(2012) Tsung-Ming Tsai et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

(2012) Yang-Shun Fan et al.   APPLIED PHYSICS LETTERS

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

(2012) Tsung-Ming Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment

(2012) Tsung-Ming Tsai et al.   IEEE ELECTRON DEVICE LETTERS

High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory

(2011) Min-Feng Hung et al.   APPLIED PHYSICS LETTERS

Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode

(2011) Wentai Lian et al.   IEEE ELECTRON DEVICE LETTERS

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

(2011) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Polarity of Bipolar Resistive Switching Characteristics in ZnO Memory Films

(2011) Wen-Yuan Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Developments in nanocrystal memory

(2011) Ting-Chang Chang et al.   Materials Today

A study of cycling induced degradation mechanisms in Si nanocrystal memory devices

(2011) Dandan Jiang et al.   NANOTECHNOLOGY

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Multilevel resistive switching with ionic and metallic filaments

(2009) Ming Liu et al.   APPLIED PHYSICS LETTERS

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

(2009) Qi Liu et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications

(2009) Yingtao Li et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

(2009) Yan Wang et al.   NANOTECHNOLOGY

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

(2008) Weihua Guan et al.   IEEE ELECTRON DEVICE LETTERS