Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
出版年份 2013 全文链接
标题
Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 102, Issue 13, Pages 133503
出版商
AIP Publishing
发表日期
2013-04-04
DOI
10.1063/1.4799655
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
- (2012) Tsung-Ming Tsai et al. APPLIED PHYSICS LETTERS
- Asymmetric Carrier Conduction Mechanism by Tip Electric Field in $\hbox{WSiO}_{X}$ Resistance Switching Device
- (2012) Yong-En Syu et al. IEEE ELECTRON DEVICE LETTERS
- Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
- (2012) Tsung-Ming Tsai et al. IEEE ELECTRON DEVICE LETTERS
- Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment
- (2012) Tsung-Ming Tsai et al. IEEE ELECTRON DEVICE LETTERS
- Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
- (2011) Kuan-Chang Chang et al. APPLIED PHYSICS LETTERS
- Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
- (2011) Te-Chih Chen et al. APPLIED PHYSICS LETTERS
- Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment
- (2011) Kuan-Chang Chang et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- The Effect of Silicon Oxide Based RRAM with Tin Doping
- (2011) Kuan-Chang Chang et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
- (2011) Yong-En Syu et al. IEEE ELECTRON DEVICE LETTERS
- Developments in nanocrystal memory
- (2011) Ting-Chang Chang et al. Materials Today
- Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
- (2010) Yu-Chun Chen et al. APPLIED PHYSICS LETTERS
- Influence of Bias-Induced Copper Diffusion on the Resistive Switching Characteristics of a SiON Thin Film
- (2010) Po-Chun Yang et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors
- (2010) S.W. Tsao et al. SOLID-STATE ELECTRONICS
- A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid
- (2009) Min-Chen Chen et al. APPLIED PHYSICS LETTERS
- Multilevel resistive switching with ionic and metallic filaments
- (2009) Ming Liu et al. APPLIED PHYSICS LETTERS
- Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device
- (2009) Qi Liu et al. APPLIED PHYSICS LETTERS
- Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions
- (2009) Qi Liu et al. IEEE ELECTRON DEVICE LETTERS
- Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications
- (2009) Yingtao Li et al. IEEE ELECTRON DEVICE LETTERS
- Resistive switching characteristics of MnOx-based ReRAM
- (2009) Sen Zhang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications
- (2009) Yan Wang et al. NANOTECHNOLOGY
- Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application
- (2008) Wei-Ren Chen et al. APPLIED PHYSICS LETTERS
- On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt
- (2008) Weihua Guan et al. APPLIED PHYSICS LETTERS
- Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted
- (2008) Qi Liu et al. APPLIED PHYSICS LETTERS
- Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application
- (2008) Qi Liu et al. JOURNAL OF APPLIED PHYSICS
- A low temperature fabrication of HfO2 films with supercritical CO2 fluid treatment
- (2008) Chih-Tsung Tsai et al. JOURNAL OF APPLIED PHYSICS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now